FILM DEPOSITION APPARATUS

• US 20140290578A1
• Filed: 03/25/2014
• Published: 10/02/2014
• Est. Priority Date: 03/28/2013
• Status: Active Grant

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: WAMURA, Yu, KUWAMOTO, Tomonori
• Granted Patent: US 9,435,026 B2
• Time in Patent Office: Days
• US Class Current: 118/725
• CPC Class Codes: C23C 16/4401 Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
• CPC Class Codes: C23C 16/45551 for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
• CPC Class Codes: C23C 16/45572 Cooled nozzles

Abstract

In discharging a source gas from a first process gas nozzle, rectifying members including a coolant flow passage provided in a concertinaing manner therein are arranged both sides of the first process gas nozzle. Then, a coolant at a temperature higher than a liquefaction temperature of the source gas and lower than a thermal decomposition temperature of the source gas is flown through the coolant flow passage, by which the first process gas nozzle is cooled through the rectifying member.

Claims

1. A film deposition apparatus, comprising:

a vacuum chamber;

a turntable provided in the vacuum chamber and configured to rotate a substrate receiving area to receive a substrate;

a heating mechanism configured to heat the substrate on the turntable;

a gas injector extending in a direction crossing a moving path of the substrate on the turntable and having a plurality of gas discharge holes formed along the direction crossing the moving path to supply a source gas to the substrate receiving area;

a rectifying member arranged on an upstream side and a downstream side of the gas injector in a rotational direction of the turntable so as to extend along a longitudinal direction of the gas injector and to include a coolant flow passage formed therein;

a coolant supply port and a coolant discharge port to circulate a coolant through the coolant flow passage;

a reaction gas supply part to supply a reaction gas to react with the source gas to the substrate receiving area and to be positioned away from the gas injector in a circumferential direction of the turntable; and

an exhaust port to evacuate the vacuum chamber.

2. The film deposition apparatus of claim 1, wherein the rectifying member is configured to surround both sides and an upper part of the gas injector.

3. The film deposition apparatus of claim 1, wherein the heating mechanism heats the substrate to a thermal decomposition temperature of the source gas or higher when a film deposition process to the substrate is performed.

4. The film deposition apparatus of claim 1, wherein a slit-like gap broader than a diameter of the gas discharge holes and facing an array area of the gas discharge holes is formed in the rectifying member below the gas injector.

5. The film deposition apparatus of claim 1, wherein the rectifying member includes a lower part provided under the gas injector and has a gap broader than a diameter of the gas discharge holes and an upper member that covers the gap provided attachable to and detachable from the lower part.

6. The film deposition apparatus of claim 1, further comprising:

a wall surface portion provided around the rotational center of the turntable and extending downward from a ceiling surface of the vacuum chamber so as to face a tip of the rectifying member; and

a supporting part provided on the tip of the rectifying member to support the rectifying member by the wall surface portion.