Semiconductor Light Emitting Device

• US 20140291714A1
• Filed: 07/18/2013
• Published: 10/02/2014
• Est. Priority Date: 07/18/2012
• Status: Active Grant

• Current Assignee: Lumens Co., Ltd.
• Original Assignee: Semicon Light Co., Ltd.
• Inventors: Jeon, Soo Kun, Park, Eun Hyun, Kim, Yong Deok
• Granted Patent: US 10,535,798 B2
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 2224/14 of a plurality of bump connectors
• CPC Class Codes: H01L 2933/0025 relating to coatings
• CPC Class Codes: H01L 33/10 with a light reflecting structure, e.g. semiconductor Bragg reflector
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/387 with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
• CPC Class Codes: H01L 33/42 Transparent materials
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/50 Wavelength conversion elements
• CPC Class Codes: H01L 33/504 Elements with two or more wavelength conversion materials

Abstract

The present disclosure relates to a semiconductor light emitting device, comprising: a plurality of semiconductor layers that grows sequentially on a growth substrate, with the plurality of semiconductor layers including a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer, generating a light with a first wavelength via electron-hole recombination; a first electrode, supplying either electrons or holes to the plurality of semiconductor layers; a second electrode, supplying, to the plurality of semiconductor layers, electrons if the holes are supplied by the first electrode, or holes if the electrons are supplied by the first electrode; a phosphor part provided over the first semiconductor layer on the side of the growth substrate, converting the light with the first wavelength generated in the active layer into a light of a second wavelength; and a non-conductive reflective film formed on the second semiconductor layer for reflecting the light from the active layer towards the first semiconductor layer on the side of the growth substrate, with the non-conductive reflective film having a distributed bragg reflector designed based on the light converted by the phosphor part.

Claims

1-14. -14. (canceled)

15. A semiconductor light emitting device comprising:

a plurality of semiconductor layers including a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer and generating light via electron-hole recombination;

a non-conductive reflective film provided on the plurality of semiconductor layers for reflecting the light from the active layer towards the first semiconductor layer;

first and second electrodes provided on the non-conductive reflective film and electrically connected with the plurality of semiconductor layers; and

,

at least one finger electrode extended between the non-conductive reflective film and the plurality of semiconductor layers, the at least one finger electrode being electrically connected to one of the first and second electrodes.

16. The semiconductor light emitting device claimed in claim 15, wherein the at least one finger electrode is extended under the other of the first and second electrodes which is not connected electrically with the at least one finger electrode.

17. The semiconductor light emitting device claimed in claim 15, wherein the at least one finger electrode are composed of two or more separate finger electrodes.

18. The semiconductor light emitting device claimed in claim 15, wherein the non-conductive reflective film includes a distributed bragg reflector.

19. The semiconductor light emitting device claimed in claim 15, further comprising:

at least one electrical connection connecting the at least one finger electrode to the one of the first and second electrodes.

20. The semiconductor light emitting device claimed in claim 15, wherein the at least one finger electrode is extended over the second semiconductor layer.

21. The semiconductor light emitting device claimed in claim 15, wherein the at least one finger electrode is extended over the first semiconductor layer.

22. The semiconductor light emitting device claimed in claim 20, further comprising:

a light-transmitting conductive film provided between the at least finger electrode and the second semiconductor layer.

23. The semiconductor light emitting device claimed in claim 15, wherein the at least one finger electrode are composed of a plurality of finger electrodes which are extended along a lateral direction of the device.

24. The semiconductor light emitting device claimed in claim 23, wherein the plurality of finger electrodes are extended along the lateral direction of the device to be located under the first and second electrodes.

25. The semiconductor light emitting device claimed in claim 15, wherein the at least one finger electrode are composed of a plurality of finger electrodes which are extended over the first and second semiconductor layers.

26. The semiconductor light emitting device claimed in claim 25, wherein the plurality of finger electrodes are extended along a lateral direction of the device.

27. The semiconductor light emitting device claimed in claim 26, wherein the plurality of finger electrodes are extended along the lateral direction of the device to be located under the first and second electrodes.

28. The semiconductor light emitting device claimed in claim 24, wherein the non-conductive reflective film includes a distributed bragg reflector.

29. The semiconductor light emitting device claimed in claim 27, wherein the non-conductive reflective film includes a distributed bragg reflector.

30. The semiconductor light emitting device claimed in claim 23, wherein the plurality of finger electrodes include two or more finger electrodes which extended over the second semiconductor layers.

31. The semiconductor light emitting device claimed in claim 30, wherein the two or more finger electrodes are extended along the lateral direction of the device to be located under the first and second electrodes.

32. The semiconductor light emitting device claimed in claim 31, further comprising:

two or more electrical connections electrically connecting the two or more finger electrodes to one of the first and second electrodes.

33. The semiconductor light emitting device claimed in claim 32, wherein the non-conductive reflective film includes a distributed bragg reflector.

34. The semiconductor light emitting device claimed in claim 33, wherein the plurality of finger electrodes include at least one finger electrode which is extended over the first semiconductor layers and is electrically connected to the other of the first and second electrodes through the non-conductive reflective film.