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SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

  • US 20140291756A1
  • Filed: 02/12/2014
  • Published: 10/02/2014
  • Est. Priority Date: 03/26/2013
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a first n-type semiconductor layer that includes a first interface and a second interface, wherein the second interface forms an upper surface of a convex protruded from the first interface;

    a p-type semiconductor layer that is stacked on the first n-type semiconductor layer and includes a first region stacked on the first interface and a second region stacked on the second interface, wherein the first region is uniformly continuous with the second region;

    a second n-type semiconductor layer that is stacked on the p-type semiconductor layer; and

    a trench that is depressed from the second n-type semiconductor layer through the p-type semiconductor layer into the convex of the first n-type semiconductor layer.

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