HIGH PERMITTIVITY LOW LEAKAGE CAPACITOR AND ENERGY STORING DEVICE

• US 20140295101A1
• Filed: 03/29/2013
• Published: 10/02/2014
• Est. Priority Date: 03/29/2013
• Status: Abandoned Application

• Current Assignee: Carver Scientific Inc.
• Original Assignee: Carver Scientific Inc.
• Inventors: Carver, David Reginald
• Application Number:
  US13/853,740
• Publication Number:
  US 20140295101A1
• Time in Patent Office: Days
• US Class Current: 427/547
• CPC Class Codes: H01G 4/18 of synthetic material, e.g. derivatives of cellulose H01G4/16 takes precedence
• CPC Class Codes: H01G 4/206 inorganic and synthetic material
• CPC Class Codes: H01G 4/30 Stacked capacitors H01G4/33 takes precedence

Abstract

A method is provided for making a high permittivity dielectric material for use in capacitors. Several high permittivity materials in an organic nonconductive media with enhanced properties and methods for making the same are disclosed. A general method for the formation of thin films of some particular dielectric material is disclosed, wherein organic polymers are utilized to produce low conductivity dielectric coatings. Additionally, a method whereby the formation of certain transition metal salts as salt or oxide matrices is demonstrated at low temperatures utilizing mild reducing agents. Further, a circuit structure and associated method of operation for the recovery and regeneration of the leakage current from the long-term storage capacitors is provided in order to enhance the manufacturing yield and utility performance of such devices.

Claims

1. A method for creating a high permittivity dielectric material comprising:

creating a wetting agent solution by adding an amount an organic polymer to a solvent suspension and mixing said solution;

processing said wetting agent solution to remove any particulate matter not dissolved into said solvent suspension;

combining said wetting agent solution with a high permittivity dielectric particulate;

mixing said wetting agent solution with the high permittivity dielectric particulate such that a slurry is created;

applying said slurry to a substrate; and

curing said slurry.

2. A method for creating a high permittivity dielectric material according to claim 1, said organic polymer comprising a polymer from the group consisting of shellac, zein, silicone oil polymer, and poly-p-xylylene polymer.

3. A method for creating a high permittivity dielectric material according to claim 1, said organic polymer comprising a monatomic oxygen synthesized poly-p-xylylene polymer.

4. A method for creating a high permittivity dielectric material according to claim 1, said high permittivity dielectric particulate comprising a high permittivity inorganic salt.

5. A method for creating a high permittivity dielectric material according to claim 1, said high permittivity dielectric particulate comprising a compound from the group consisting of barium titanate, sodium borohydride, sodium borohydride and a borax salt.

6. A method for creating a high permittivity dielectric material according to claim 1, said high permittivity dielectric particulate a transition metal salt.

7. A method for creating a high permittivity dielectric material according to claim 1, said high permittivity dielectric particulate a transition metal salt from the group consisting of a Gd salt, Sr salt, Sn salt, and Fe salt.

8. A method for creating a high permittivity dielectric material according to claim 1, further comprising adding a breakdown voltage adjuvant to the slurry.

9. A method for creating a high permittivity dielectric material according to claim 8, said breakdown voltage adjuvant comprising an element from the group consisting of Y, Ni, Sm, Sc, Tb, Yb, La, Te, Ti, Zr, Ge, Mg, Pb, Hf, Cu, Ta, Nb, and Bi.

10. A method for creating a high permittivity dielectric material according to claim 8, said breakdown voltage adjuvant comprising a compound containing an element from the group consisting of Y, Ni, Sm, Sc, Tb, Yb, La, Te, Ti, Zr, Ge, Mg, Pb, Hf, Cu, Ta, Nb, and Bi.

11. A method for creating a high permittivity dielectric material according to claim 1, further comprising a step of applying an electric field across said substrate before completion of curing of said slurry.

12. A method for creating a high permittivity dielectric material according to claim 11, wherein the strength of said electric field is greater than 100 V/cm.

13. A method for creating a high permittivity dielectric material according to claim 1, further comprising a step of applying a magnetic field across said substrate before completion of curing of said slurry.

14. A method for creating a high permittivity dielectric material according to claim 13, wherein the magnetic field is perpendicular to the substrate.

15. A method for creating a high permittivity dielectric material according to claim 13, wherein the step of applying a magnetic field across said substrate includes placing the slurry applied to the substrate between magnetic poles of a magnetic source such that magnetic field between the magnetic poles of said magnetic source is parallel to the substrate.

16. A method for creating a high permittivity dielectric material according to claim 14, whereby the strength of said magnetic field is greater than 1 Gauss.

17. A method for creating a high permittivity dielectric material according to claim 12, further comprising a step of applying a magnetic field across said substrate before solidification of said slurry.

18. A method for creating a high permittivity dielectric material according to claim 17, wherein the magnetic field is perpendicular to the substrate.

19. A method for creating a high permittivity dielectric material according to claim 17, wherein the step of applying a magnetic field across said substrate includes placing the slurry applied to the substrate between magnetic poles of a magnetic source such that magnetic field between the magnetic poles of said magnetic source is parallel to the substrate.

20. A method for creating a high permittivity dielectric material according to claim 19, whereby the strength of said magnetic field is greater than 1 Gauss.