METHOD OF MANUFACTURING LIGHT-EMITTING DEVICE

• US 20140295591A1
• Filed: 02/12/2014
• Published: 10/02/2014
• Est. Priority Date: 03/28/2013
• Status: Active Grant

• Current Assignee: Toyoda Gosei Company Limited (Toyota Motor Corporation)
• Original Assignee: Toyoda Gosei Company Limited (Toyota Motor Corporation)
• Inventors: NONOGAWA, Takashi, TERAYAMA, Takashi, HAYASHI, Toshimasa
• Granted Patent: US 9,343,618 B2
• Time in Patent Office: Days
• US Class Current: 438/27
• CPC Class Codes: H01L 2933/0041 relating to wavelength conversion elements
• CPC Class Codes: H01L 33/0095 Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
• CPC Class Codes: H01L 33/508 having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material

Abstract

A method of manufacturing a light-emitting device includes providing a case including an annular sidewall and an LED chip including a chip substrate and a crystal layer and mounted in a region surrounded by the sidewall of the case, and dripping a droplet of an electrically-charged phosphor-containing resin so as to fill a space between the sidewall and the LED chip. The droplet is attracted toward the sidewall by an electrostatic force during the dripping.

Claims

1. A method of manufacturing a light-emitting device, comprising:

providing a case comprising an annular sidewall and an LED chip comprising a chip substrate and a crystal layer and mounted in a region surrounded by the sidewall of the case; and

dripping a droplet of an electrically-charged phosphor-containing resin so as to fill a space between the sidewall and the LED chip,

wherein the droplet is attracted toward the sidewall by an electrostatic force during the dripping.

2. The method according to claim 1, wherein the phosphor-containing resin is not applied to an upper surface of the LED chip.

3. The method according to claim 1, wherein the phosphor-containing resin has a relative permittivity of not less than 3.

4. The method according to claim 1, wherein the droplet has a viscosity of not less than 5 Pa·

s.

5. The method according to claim 1, wherein the droplet is dripped while the crystal layer is grounded.