Semiconductor Device
First Claim
1. A semiconductor device comprising:
- an interlayer dielectric film formed on a substrate and including a trench;
a gate insulating film formed in the trench;
a work function control film formed on the gate insulating film of the trench along bottom and sidewalls of the trench;
a first metal gate pattern formed on the work function control film of the trench and filling a portion of the trench; and
a second metal gate pattern formed on the first metal gate pattern of the trench, the second metal gate pattern different from the first metal gate pattern.
1 Assignment
0 Petitions
Accused Products
Abstract
Provided are a semiconductor device and a fabricating method of the semiconductor device. The semiconductor device may include an interlayer dielectric film formed on a substrate and including a trench, a gate insulating film formed in the trench, a first work function control film formed on the gate insulating film of the trench along bottom and sidewalls of the trench, a first metal gate pattern formed on the first work function control film of the trench and filling a portion of the trench, and a second metal gate pattern formed on the first metal gate pattern of the trench, the second metal gate pattern different from the first metal gate pattern.
57 Citations
20 Claims
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1. A semiconductor device comprising:
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an interlayer dielectric film formed on a substrate and including a trench; a gate insulating film formed in the trench; a work function control film formed on the gate insulating film of the trench along bottom and sidewalls of the trench; a first metal gate pattern formed on the work function control film of the trench and filling a portion of the trench; and a second metal gate pattern formed on the first metal gate pattern of the trench, the second metal gate pattern different from the first metal gate pattern. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A semiconductor device comprising:
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an interlayer dielectric film formed on a substrate and including a first trench and a second trench spaced apart from the first trench; an NMOS transistor having a first replacement metal gate formed in the first trench; and a PMOS transistor having a second replacement metal gate formed in the second trench, wherein the first replacement metal gate comprises; an N type work function control film formed along bottom and sidewalls of the first trench; a first metal gate pattern formed on the N type work function control film of the first trench and filling a-portion of the first trench; and a second metal gate pattern formed on the first metal gate pattern of the first trench, the second metal gate pattern different from the first metal gate pattern. - View Dependent Claims (14, 15)
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16. A semiconductor device comprising:
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an interlayer dielectric film on a substrate and including a trench; a gate insulating film on bottom and sidewall surfaces of the trench; an N type work function control film on the gate insulating film comprising a chamfered surface at an opening of the trench defining an acute angle with respect to the sidewall surfaces of the trench; a first metal gate pattern on the N type work function control film and filling a portion of the trench; and a second metal gate pattern on the first metal gate pattern, the second metal gate pattern comprising a different composition from a composition of the first metal gate pattern. - View Dependent Claims (17, 18, 19, 20)
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Specification