Method for Reducing Forming Voltage in Resistive Random Access Memory
First Claim
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1. A method comprising:
- depositing a first electrode,wherein the first electrode comprises polysilicon;
depositing a first resistive switching film over the first electrode,wherein the first resistive switching film comprises a first dielectric material configured to develop conductive pathways during application of a predetermined voltage and further configured to maintain said conductive pathways after said predetermined voltage is removed,wherein the first dielectric material comprises oxygen,wherein the first resistive switching film is deposited at a temperature of less than 200°
C.; and
depositing a second electrode.
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Abstract
Methods for producing RRAM resistive switching elements having reduced forming voltage include preventing formation of interfacial layers, and creating electronic defects in a dielectric film. Suppressing interfacial layers in an electrode reduces forming voltage. Electronic defects in a dielectric film foster formation of conductive pathways.
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Citations
20 Claims
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1. A method comprising:
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depositing a first electrode, wherein the first electrode comprises polysilicon; depositing a first resistive switching film over the first electrode, wherein the first resistive switching film comprises a first dielectric material configured to develop conductive pathways during application of a predetermined voltage and further configured to maintain said conductive pathways after said predetermined voltage is removed, wherein the first dielectric material comprises oxygen, wherein the first resistive switching film is deposited at a temperature of less than 200°
C.; anddepositing a second electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification