ELECTRONIC DEVICE, SOLID STATE IMAGING APPARATUS, AND METHOD OF PRODUCING ELECTRODE FOR ELECTRONIC DEVICE

• US 20140306180A1
• Filed: 04/09/2014
• Published: 10/16/2014
• Est. Priority Date: 04/10/2013
• Status: Active Grant

• Current Assignee: Sony Corporation (Sony Group Corp.)
• Original Assignee: Sony Corporation (Sony Group Corp.)
• Inventors: MORIWAKI, Toshiki, UDAKA, Toru
• Granted Patent: US 10,236,396 B2
• Time in Patent Office: Days
• US Class Current: 257/14
• CPC Class Codes: H01L 27/14665 Imagers using a photoconductor layer
• CPC Class Codes: H01L 2924/0134 Quaternary Alloys
• CPC Class Codes: H01L 31/0224 Electrodes
• CPC Class Codes: H01L 31/022466 made of transparent conductive layers, e.g. TCO, ITO layers
• CPC Class Codes: H01L 31/022475 composed of indium tin oxide [ITO]
• CPC Class Codes: H01L 31/035209 comprising a quantum structures
• CPC Class Codes: H10K 30/81 Electrodes
• CPC Class Codes: H10K 30/82 Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
• CPC Class Codes: H10K 39/32 Organic image sensors
• CPC Class Codes: Y02E 10/549 Organic PV cells

Abstract

There are provided an electronic device including a first electrode, a second electrode and a photoelectric conversion layer sandwiched between the first electrode and the second electrode, the first electrode including an amorphous oxide composed of at least a quaternary compound of indium, gallium and/or aluminum, zinc and oxygen, and a difference between a work function value of the second electrode and a work function value of the first electrode being 0.4 eV or more; and a method of producing an electrode for the electronic device.

Claims

1. An electronic device, comprising:

a first electrode, a second electrode and a photoelectric conversion layer sandwiched between the first electrode and the second electrode,

the first electrode including an amorphous oxide composed of at least a quaternary compound of indium, gallium and/or aluminum, zinc and oxygen, and

a difference between a work function value of the second electrode and a work function value of the first electrode being 0.4 eV or more.

2. The electronic device according to claim 1, wherein

a difference between a work function value of the second electrode and a work function value of the first electrode is set to 0.4 eV or more, and

based on the difference between the work function values, an internal electric field is generated in the photoelectric conversion layer to improve an internal quantum efficiency.

8. The electronic device according to claim 1, wherein

the work function value of the first electrode is 4.1 eV to 4.5 eV.

9. The electronic device according to claim 1, wherein

the first electrode is composed of indium gallium complex oxide, indium-doped gallium zinc complex oxide, aluminum oxide-doped zinc oxide or gallium-doped zinc oxide.

10. The electronic device according to claim 1, wherein

the second electrode is composed of indium tin complex oxide, indium zinc complex oxide or tin oxide.

11. The electronic device according to claim 1, wherein

the first electrode has light transmittance of 80% or more at wavelengths of 400 nm to 660 nm.

12. The electronic device according to claim 1, wherein

the first electrode has a sheet resistance value of 3×

10 Ω

/square to 1×

103 Ω

/square.

13. The electronic device according to claim 1, wherein

an oxygen content rate of the first electrode is less than an oxygen content rate of a stoichiometric composition.

14. A solid state imaging apparatus including the electronic device according to claim 1.

20. The electronic device according to claim 1, wherein

an oxygen content rate of the first electrode is less than an oxygen content rate of a stoichiometric composition.

3. An electronic device, comprising:

a first electrode, a second electrode and a photoelectric conversion layer sandwiched between the first electrode and the second electrode,

the first electrode including an amorphous oxide composed of at least a quaternary compound of indium, gallium and/or aluminum, zinc and oxygen,

the first electrode having a laminated structure including a first B layer and a first A layer from a photoelectric conversion layer side, and

a work function value of the first A layer of the first electrode being lower than a work function of the first B layer of the first electrode.

4. The electronic device according to claim 3, wherein a difference between the work function value of the first A layer 21A of the first electrode 21 and the work function of the first B layer 21B of the first electrode 21 is 0.1 eV to 0.2 eV.

5. The electronic device according to claim 3, wherein a difference between a work function value of the second electrode and a work function value of the first A layer of the first electrode is 0.4 eV or more.

6. The electronic device according to claim 3, wherein

the first electrode has a thickness of 1×

10−

8 m to 1×

10−

7 m, and

a ratio between the thickness of the first A layer of the first electrode and the thickness of the first B layer of the first electrode is 9/1 to 1/9.

7. The electronic device according to claim 3, wherein

a difference between a work function value of the second electrode and a work function value of the first electrode is set to 0.4 eV or more, and

based on the difference between the work function values, an internal electric field is generated in the photoelectric conversion layer to improve an internal quantum efficiency.

15. The electronic device according to claim 3, wherein

the work function value of the first electrode is 4.1 eV to 4.5 eV.

16. The electronic device according to claim 3, wherein

the first electrode is composed of indium gallium complex oxide, indium-doped gallium zinc complex oxide, aluminum oxide-doped zinc oxide or gallium-doped zinc oxide.

17. The electronic device according to claim 3, wherein

the second electrode is composed of indium tin complex oxide, indium zinc complex oxide or tin oxide.

18. The electronic device according to claim 3, wherein

the first electrode has light transmittance of 80% or more at wavelengths of 400 nm to 660 nm.

19. The electronic device according to claim 3, wherein

the first electrode has a sheet resistance value of 3×

10 Ω

/square to 1×

103 Ω

/square.