LIGHT EMITTING DIODE PACKAGE AND METHOD FOR MANUFACTURING THE SAME

• US 20140306248A1
• Filed: 04/26/2013
• Published: 10/16/2014
• Est. Priority Date: 04/30/2012
• Status: Active Grant

• Current Assignee: Pukyong National University (Government of The Republic of Korea)
• Original Assignee: Pukyong National University (Government of The Republic of Korea)
• Inventors: Ahn, Hyung Soo, Yang, Min, Shin, Kee Sam, Yi, Sam Nyung, Lee, Hyo Jong, Yu, Moon Yeoung
• Granted Patent: US 9,595,638 B2
• Time in Patent Office: Days
• US Class Current: 257/88
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 2933/0033 relating to semiconductor body packages
• CPC Class Codes: H01L 33/005 Processes
• CPC Class Codes: H01L 33/36 characterised by the electrodes
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

The present invention relates to a nitride light emitting diode (LED) package, and more specifically, to a nitride light emitting diode package which can improve light-emitting efficiency by increasing light emitting surface area, reduce operating voltage by simultaneously emitting light from six cells at once, and can increase operating current.

Claims

1. A light emitting diode package, comprising;

a substrate;

a plurality of LED cells formed on the substrate;

two or more groups including two or more cells;

p type electrodes formed on top of the cells;

insulation layer exposing underlying n layer with trench formed by etching a part of area around the cells;

n type contact electrode which is elongated from the n layer of the cells and formed on n type nitride semiconductor layer exposed by trench; and

two P type contact electrodes which are elongated from each p type electrodes of the two groups and formed on the insulation layer which is formed on the n type semiconductor,.

2. The light emitting diode package according to claim 1, wherein the cells are 6 or more.

3. The light emitting diode package according to claim 1, wherein the cells are placed symmetrically or asymmetrically.

4. The light emitting diode package according to claim 1, wherein the lower direction of the substrate is placed on a heat dissipation device.

5. The light emitting diode package according to claim 1, wherein single voltage input is applied to drive the cells.

6. The light emitting diode package according to claim 1, wherein single voltage input is applied to drive the two or more cells and current flows respectively through each cell.

7. The light emitting diode package according to claim 1, further comprising a current path on a part of each cell, wherein overcurrent and static electricity flows along the current path.

8. A method for making a light emitting diode package, comprising;

preparing a substrate;

forming a plurality of semiconductor layers including n-layer, active, p-layer on the substrate;

exposing n-layer by etching the semiconductor layers to form a plurality of LED cells;

forming p-electrodes on the top of the cells;

forming insulation layer on the area of the substrate surface except areas which the cells occupy;

forming trench by etching a part of the insulation layer;

forming n type electrode pads on the n layer exposed with the trench;

forming reflector on top of the plurality of cells; and

forming p type electrode pads on the top of the cells and on a part of the insulation layer.