MULTI-SOURCE JFET DEVICE
First Claim
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1. A junction field-effect transistor (JFET) device, comprising:
- a drain region;
a junction gate region surrounding the drain region; and
a source region surrounding the junction gate region and comprising two or more source terminals.
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Abstract
A junction field-effect transistor (JFET) device is provided. The JFET includes a drain region, a source region, and a junction gate region disposed between the drain region and the source region, and the source region includes two or more source terminals.
5 Citations
14 Claims
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1. A junction field-effect transistor (JFET) device, comprising:
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a drain region; a junction gate region surrounding the drain region; and a source region surrounding the junction gate region and comprising two or more source terminals. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A junction field-effect transistor (JFET) device, comprising a drain region, a source region, and a junction gate region disposed between the drain region and the source region,
wherein the source region comprises two or more source terminals.
Specification