SELF-ALIGNED STRUCTURE FOR BULK FinFET
First Claim
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1. A FinFET structure comprising:
- a bulk semiconductor substrate;
a plurality of semiconductor fins extending from the bulk semiconductor substrate, each of the plurality of semiconductor fins having a top portion and a bottom portion such that the bottom portion of the semiconductor fins is doped and the top portion of the semiconductor fins is undoped;
a portion of the bulk semiconductor substrate directly underneath the plurality of semiconductor fins being doped to form an n+ or p+ well; and
an oxide formed between the bottom portions of the fins.
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Abstract
A FinFET structure which includes a bulk semiconductor substrate; semiconductor fins extending from the bulk semiconductor substrate, each of the semiconductor fins having a top portion and a bottom portion such that the bottom portion of the semiconductor fins is doped and the top portion of the semiconductor fins is undoped; a portion of the bulk semiconductor substrate directly underneath the plurality of semiconductor fins being doped to form an n+ or p+ well; and an oxide formed between the bottom portions of the fins.
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Citations
8 Claims
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1. A FinFET structure comprising:
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a bulk semiconductor substrate; a plurality of semiconductor fins extending from the bulk semiconductor substrate, each of the plurality of semiconductor fins having a top portion and a bottom portion such that the bottom portion of the semiconductor fins is doped and the top portion of the semiconductor fins is undoped; a portion of the bulk semiconductor substrate directly underneath the plurality of semiconductor fins being doped to form an n+ or p+ well; and an oxide formed between the bottom portions of the fins. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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Specification