GAS SENSORS AND METHODS OF PREPARATION THEREOF
First Claim
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1. A device, comprising:
- a conductometric porous silicon gas sensor including a n-type silicon substrate having a porous silicon layer, wherein a plurality of nanostructures are disposed on a portion of the porous silicon layer to provide a fractional coverage on the porous silicon layer, wherein the sensor is configured to allow light to illuminate the porous silicon layer, wherein the conductometric porous silicon gas sensor is operative to transduce the presence of a gas into an impedance change when exposed to light, wherein the impedance change correlates to the gas concentration.
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Abstract
Embodiments of the present disclosure include sensors, arrays of conductometric sensors, devices including conductometric sensors, methods of making conductometric sensors, methods of using conductometric gas sensors, methods of enhancing sensor response with light, and the like.
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Citations
23 Claims
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1. A device, comprising:
a conductometric porous silicon gas sensor including a n-type silicon substrate having a porous silicon layer, wherein a plurality of nanostructures are disposed on a portion of the porous silicon layer to provide a fractional coverage on the porous silicon layer, wherein the sensor is configured to allow light to illuminate the porous silicon layer, wherein the conductometric porous silicon gas sensor is operative to transduce the presence of a gas into an impedance change when exposed to light, wherein the impedance change correlates to the gas concentration. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method of detecting a concentration of a gas, comprising:
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providing a conductometric porous silicon gas sensor including a n-type silicon substrate having a porous silicon layer, wherein a plurality of nanostructures are disposed on a portion of the porous silicon layer, wherein the conductometric porous silicon gas sensor is operative to transduce the presence of a gas into an impedance change when exposed to light, wherein the impedance change correlates to the gas concentration;
wherein operation of the conductometric porous silicon gas sensor includes;exposing the porous silicon layer to light; introducing the gas to the sensor; and measuring an impedance change in the sensor. - View Dependent Claims (10, 11, 12, 13, 14, 15)
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16. A device, comprising:
a conductometric gas sensor including a n-type substrate having a porous layer, wherein a plurality of nanostructures are disposed on a portion of the porous layer, wherein the nanostructure provides a fractional coverage on the porous layer, wherein the sensor is configured to allow light to illuminate the porous silicon layer, wherein the conductometric gas sensor is operative to transduce the presence of a gas into an impedance change in the presence of light, wherein the impedance change correlates to the gas concentration. - View Dependent Claims (17, 18, 19, 20, 21, 22, 23)
Specification