GAS SENSORS AND METHODS OF PREPARATION THEREOF

• US 20140311221A1
• Filed: 04/25/2014
• Published: 10/23/2014
• Est. Priority Date: 08/25/2011
• Status: Active Grant

• Current Assignee: Georgia Tech Research Corporation (University System of Georgia)
• Original Assignee: Georgia Tech Research Corporation (University System of Georgia)
• Inventors: Gole, James, Laminack, William Ivey
• Granted Patent: US 9,568,448 B2
• Time in Patent Office: Days
• US Class Current: 73/31.06
• CPC Class Codes: G01N 27/127 comprising nanoparticles
• CPC Class Codes: G01N 27/128 Microapparatus

Abstract

Embodiments of the present disclosure include sensors, arrays of conductometric sensors, devices including conductometric sensors, methods of making conductometric sensors, methods of using conductometric gas sensors, methods of enhancing sensor response with light, and the like.

Claims

1. A device, comprising:

a conductometric porous silicon gas sensor including a n-type silicon substrate having a porous silicon layer, wherein a plurality of nanostructures are disposed on a portion of the porous silicon layer to provide a fractional coverage on the porous silicon layer, wherein the sensor is configured to allow light to illuminate the porous silicon layer, wherein the conductometric porous silicon gas sensor is operative to transduce the presence of a gas into an impedance change when exposed to light, wherein the impedance change correlates to the gas concentration.

2. The device of claim 1, wherein the sensor includes a window or opening to allow light to illuminate the porous silicon layer.

3. The device of claim 1, wherein the light is from a light source selected from the group consisting of:

the sun, an artificial light source, and a combination thereof.

4. The device of claim 3, wherein the light source is part of the device.

5. The device of claim 1, wherein the light is selected from the group consisting of:

visible light, ultraviolet light, and a combination thereof.

6. The device of claim 5, wherein the nanostructure is selected from the group consisting of:

aluminum oxide, aluminum oxynitride, silicon oxide, silicon oxynitride, tin oxide, tin oxynitride, chromia, chromium oxynitride, iron oxide, iron oxynitride, nickel oxide, nickel oxynitride, silver oxide, silver oxynitride, cobalt oxide, cobalt oxynitride, zinc oxide, zinc oxynitride, platinum oxide, platinum oxynitride, palladium oxide, palladium oxynitride, vanadium oxide, vanadium oxynitride, molybdenum oxide, molybdenum oxynitride, lead oxide, lead oxynitride, titanium oxide, titanium oxinitride, gold oxide, gold oxynitride, copper oxide, copper oxynitride, and a combination thereof.

7. The device of claim 5, wherein the nanostructure is selected from the group consisting of:

TiO_x, x is 1 to 2;

TiO_2-xN_x, x is 1 to 2; and

a combination thereof.

8. The device of claim 7, wherein the nanostructure is a nanoparticle.

9. A method of detecting a concentration of a gas, comprising:

providing a conductometric porous silicon gas sensor including a n-type silicon substrate having a porous silicon layer, wherein a plurality of nanostructures are disposed on a portion of the porous silicon layer, wherein the conductometric porous silicon gas sensor is operative to transduce the presence of a gas into an impedance change when exposed to light, wherein the impedance change correlates to the gas concentration;

wherein operation of the conductometric porous silicon gas sensor includes;

exposing the porous silicon layer to light;

introducing the gas to the sensor; and

measuring an impedance change in the sensor.

10. The method of claim 9, wherein the sensor includes a window or opening configured to allow light to illuminate the porous silicon layer.

11. The method of claim 9, wherein the light is selected from the group consisting of:

visible light, ultraviolet light, and a combination thereof.

12. The method of claim 9, wherein the light is from a light source selected from the group consisting of:

the sun, an artificial light source, and a combination thereof.

13. The method of claim 12, wherein the light source is part of the device.

14. The method of claim 9, further comprising:

correlating the impedance change to the concentration of the gas.

15. The method of claim 14, wherein correlating includes computing a magnitude of the impedance change, computing the time over which the magnitude of the impedance change occurs, and computing a slope from the ratio of the magnitude of the impedance change and the time to determine the concentration of the gas.

16. A device, comprising:

a conductometric gas sensor including a n-type substrate having a porous layer, wherein a plurality of nanostructures are disposed on a portion of the porous layer, wherein the nanostructure provides a fractional coverage on the porous layer, wherein the sensor is configured to allow light to illuminate the porous silicon layer, wherein the conductometric gas sensor is operative to transduce the presence of a gas into an impedance change in the presence of light, wherein the impedance change correlates to the gas concentration.

17. The device of claim 16, wherein the sensor includes a window or an opening to allow light to illuminate the porous silicon layer.

18. The device of claim 16, wherein the light is from a light source selected from the group consisting of:

the sun, an artificial light source, and a combination thereof.

19. The device of claim 18, wherein the light source is part of the device.

20. The device of claim 16, wherein the light is selected from the group consisting of:

visible light, ultraviolet light, and a combination thereof.

21. The device of claim 16, wherein the n-type substrate is an extrinsic n-type semiconductor.

22. The device of claim 16, wherein the n-type substrate is selected from the group consisting of:

silicon, GaP, InP, and CdTe.

23. The device of claim 16, wherein the n-type substrate is selected from the group consisting of:

n- or n⁺-type doped wafer and n- or n⁺-type phosphorous doped wafer.