BACK PLANE OF FLAT PANEL DISPLAY AND METHOD OF MANUFACTURING THE SAME
First Claim
1. A back plane for a flat-panel display device, the back plane comprising:
- a substrate;
a gate electrode on the substrate;
a first insulation layer on the substrate and covering the gate electrode;
a semiconductor layer on the first insulation layer and corresponding to the gate electrode; and
a source electrode and a drain electrode on the semiconductor layer and electrically coupled to respective portions of the semiconductor layer,wherein the semiconductor layer comprises indium, tin, zinc, and gallium, andwherein an atomic concentration of the gallium is from about 5% to about 15%.
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Accused Products
Abstract
According to an aspect of the present invention, there is provided a back plane for a flat-panel display device and a method of manufacturing the same. The back plane including: a substrate; a gate electrode on the substrate; a first insulation layer on the substrate and covering the gate electrode; a semiconductor layer on the first insulation layer and corresponding to the gate electrode; and a source electrode and a drain electrode on the semiconductor layer and electrically coupled to respective portions of the semiconductor layer. Here, the semiconductor layer includes indium, tin, zinc, and gallium, and an atomic concentration of the gallium is from about 5% to about 15%.
12 Citations
18 Claims
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1. A back plane for a flat-panel display device, the back plane comprising:
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a substrate; a gate electrode on the substrate; a first insulation layer on the substrate and covering the gate electrode; a semiconductor layer on the first insulation layer and corresponding to the gate electrode; and a source electrode and a drain electrode on the semiconductor layer and electrically coupled to respective portions of the semiconductor layer, wherein the semiconductor layer comprises indium, tin, zinc, and gallium, and wherein an atomic concentration of the gallium is from about 5% to about 15%. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method of manufacturing a back plane for a flat-panel display device, the method comprising:
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a first masking operation forming a gate electrode on a substrate; forming a first insulation layer on the substrate to cover the gate electrode; a second masking operation forming a semiconductor layer on the first insulation layer to correspond to the gate electrode; a third masking operation forming a second insulation layer having a first hole and a second hole exposing respective portions of the semiconductor layer, the second insulation layer covering the semiconductor layer and being on the first insulation layer; and a fourth masking operation forming a source electrode and a drain electrode on the semiconductor layer, the source electrode and the drain electrode being electrically coupled to the respective portions of the semiconductor layer, wherein the semiconductor layer comprises indium, tin, zinc, and gallium, and wherein an atomic concentration of the gallium is from about 5% to about 15%. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15)
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16. A display device comprising:
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a substrate; and a semiconductor layer on the substrate, the semiconductor layer comprising indium, tin, zinc, and gallium, wherein an atomic concentration of the gallium is from about 5% to about 15%. - View Dependent Claims (17, 18)
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Specification