Transistor, the Preparation Method Therefore, and Display Panel
First Claim
1. A transistor, wherein, it comprises:
- a gate electrode;
a gate insulating layer, covering the gate electrode;
an oxide semiconductor layer, formed on the gate insulating layer;
a first protective layer, formed on the oxide semiconductor layer;
a source/drain electrode, connected with the oxide semiconductor layer; and
a second protective layer, covering the source/drain electrode;
wherein, the hydrogen atom content per unit volume of the first protective layer is less than that of the gate insulating layer, the hydrogen atom content per unit volume of the gate insulating layer is less than that of the second protective layer.
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Abstract
The present invention discloses a transistor, the preparation method thereof, and a display panel. The transistor comprises: a gate electrode; a gate insulating layer covering the gate electrode; an oxide semiconductor layer formed on the gate insulating layer; a first protective layer formed on the oxide semiconductor layer; a source/drain electrode connected with the oxide semiconductor layer; and a second protective layer covering the source/drain electrode; wherein, the hydrogen atom content per unit volume of the first protective layer is less than that of the gate insulating layer, and the hydrogen atom content per unit volume of the gate insulating layer is less than that of the second protective layer. Through the above solutions, the present invention can suppress the combination of the oxygen atom of the semiconductor layer in the transistor and the external hydrogen atom, to improve the performance and stability of the device.
6 Citations
11 Claims
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1. A transistor, wherein, it comprises:
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a gate electrode; a gate insulating layer, covering the gate electrode; an oxide semiconductor layer, formed on the gate insulating layer; a first protective layer, formed on the oxide semiconductor layer; a source/drain electrode, connected with the oxide semiconductor layer; and a second protective layer, covering the source/drain electrode; wherein, the hydrogen atom content per unit volume of the first protective layer is less than that of the gate insulating layer, the hydrogen atom content per unit volume of the gate insulating layer is less than that of the second protective layer. - View Dependent Claims (2, 3, 4)
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5. A display panel, wherein, it comprises a transistor, which comprises:
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a gate electrode; a gate insulating layer, covering the gate electrode; an oxide semiconductor layer, formed on the gate insulating layer; a first protective layer, formed on the oxide semiconductor layer; a source/drain electrode, connected with the oxide semiconductor layer; and a second protective layer, covering the source/drain electrode; wherein, the hydrogen atom content per unit volume of the first protective layer is less than that of the gate insulating layer, the hydrogen atom content per unit volume of the gate insulating layer is less than that of the second protective layer. - View Dependent Claims (6, 7, 8)
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9. An preparation method of transistor, wherein, it comprises:
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forming a gate electrode on a substrate; forming a gate insulating layer on the gate electrode, which covers the gate electrode; forming an oxide semiconductor layer on the gate insulating layer; forming a first protective layer on the oxide semiconductor layer, controlling the hydrogen atom content per unit volume of the protective layer less than that of the gate insulating layer; forming a source/drain electrode on the first protective layer; and forming a second protective layer on the source/drain electrode, which covers the source/drain electrode, controlling the hydrogen atom content per unit volume of the second protective layer more than that of the gate insulating layer. - View Dependent Claims (10, 11)
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Specification