SEMICONDUCTOR LIGHT EMITTING DEVICE

• US 20140312369A1
• Filed: 01/02/2014
• Published: 10/23/2014
• Est. Priority Date: 04/19/2013
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: LEE, Seung Hwan, LEE, Jin Hyun, HONG, Hyun Kwon, YOON, Ju Heon, KIM, Sang Yeon, LIM, Wan Tae
• Granted Patent: US 9,070,835 B2
• Time in Patent Office: Days
• US Class Current: 257/96
• CPC Class Codes: H01L 2224/13 of an individual bump connector
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/40 Materials therefor
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating

Abstract

A semiconductor light emitting device including a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer; a first electrode connected to the first conductivity type semiconductor layer; a second electrode including a contact layer connected to the second conductivity type semiconductor layer, a capping layer disposed on the contact layer, and a metal buffer layer disposed on the capping layer, the metal buffer layer encompasses an upper and lateral surface of the capping layer; a first insulating layer disposed on the light emitting structure such that the first and second electrodes are exposed; and a second insulating layer disposed on the first insulating layer such that at least a portion of the first electrode and at least a portion of the metal buffer layer are exposed.

Claims

1. A semiconductor light emitting device comprising:

a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer;

a first electrode connected to the first conductivity type semiconductor layer;

a second electrode including a contact layer connected to the second conductivity type semiconductor layer, a capping layer disposed on the contact layer, and a metal buffer layer disposed on the capping layer, the metal buffer layer encompasses an upper and lateral surface of the capping layer;

a first insulating layer disposed on the light emitting structure such that the first and second electrodes are exposed; and

a second insulating layer disposed on the first insulating layer such that at least a portion of the first electrode and at least a portion of the metal buffer layer are exposed.

2. The semiconductor light emitting device of claim 1, wherein the first electrode and the metal buffer layer are formed of the same material.

3. The semiconductor light emitting device of claim 1, wherein the metal buffer layer is thicker than the contact layer or the capping layer.

4. The semiconductor light emitting device of claim 1, wherein a gap is arranged between the capping layer and the first insulating layer, and

the gap is filled with the metal buffer layer.

5. The semiconductor light emitting device of claim 1, wherein the metal buffer layer encompasses an end portion of the first insulating layer.

6. The semiconductor light emitting device of claim 1, wherein the metal buffer layer is formed of a material having a higher degree of fracture toughness than that of the capping layer.

7. The semiconductor light emitting device of claim 1, wherein the capping layer includes a capping surface layer contacting the metal buffer layer, the capping surface layer being formed of at least one of Cr, Pt and Au.

8. The semiconductor light emitting device of claim 1, wherein the capping layer includes at least one of Ti and Ni, and

the metal buffer layer includes at least one of Au, Ag, Al, Pt, Fe, Cu, Sn, Pb, Ni, and Pd, and alloys thereof.

9. The semiconductor light emitting device of claim 1, wherein the first electrode is disposed on a part of the first conductivity type semiconductor layer exposed by etching a portion of the light emitting structure.

10. The semiconductor light emitting device of claim 9, wherein the first insulating layer extends from an exposed part of the first conductivity type semiconductor layer to a top of the second conductivity type semiconductor layer, the first insulating layer covering a lateral surface of the light emitting structure.

11. The semiconductor light emitting device of claim 1, wherein the first electrode and the second electrode are disposed in the same direction.

12. The semiconductor light emitting device of claim 1, further comprising a first pad electrode disposed on the first electrode and a second pad electrode disposed on a portion of the metal buffer layer exposed by the second insulating layer.

13. The semiconductor light emitting device of claim 1, wherein the first electrode includes at least one conductive via penetrating through the second conductivity type semiconductor layer and the active layer and connected to the first conductivity type semiconductor layer.

14. A semiconductor light emitting device comprising:

a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer;

first and second electrodes connected to the first and second conductivity type semiconductor layers, respectively;

an insulating layer disposed on the first and second electrodes; and

a metal buffer layer interposed between the second electrode and the insulating layer and encompassing an end portion of the second electrode.

15. The semiconductor light emitting device of claim 14, wherein the metal buffer layer and the first electrode are formed of the same material.

16. A semiconductor light emitting device comprising:

a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer;

first and second electrodes connected to the first and second conductivity type semiconductor layers, respectively;

an insulating layer disposed on the first and second electrodes; and

a metal buffer layer disposed on the second electrode,

wherein the metal buffer layer includes a structural characteristic such that the metal buffer layer has a higher crack resistance than the second electrode.

17. The semiconductor light emitting device of claim 16, wherein the structural characteristic is at least one of thickness, material, and shape.

18. The semiconductor light emitting device of claim 17, wherein the structural characteristic includes material, the metal buffer layer is formed of a material having a higher degree of fracture toughness than that of the second electrode.

19. The semiconductor light emitting device of claim 17, wherein the structural characteristic includes material, the metal buffer layer is formed of a material having a higher degree of ductility and malleability than that of the second electrode.

20. The semiconductor light emitting device of claim 16, wherein the metal buffer layer is arranged on a side surface of at least one of the second electrode and the insulating layer.