POWER SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
First Claim
1. A power semiconductor device comprising:
- a base substrate having one surface and an other surface opposing the one surface and comprising a first conductive type drift layer;
a second conductive type semiconductor substrate disposed on the other surface of the base substrate;
a first conductive type diffusion layer disposed in the base substrate and having an impurity concentration higher than that of the drift layer;
a second conductive type well layer disposed under the one surface of the base substrate;
a trench formed from the one surface of the base substrate including the well layer so as to penetrate through the diffusion layer in a first direction;
an insulation film disposed on the one surface of the base substrate including an inner wall of the trench; and
a first electrode disposed in the trench,wherein a peak point of an impurity doping concentration of the diffusion layer in a second direction perpendicular to the first direction is positioned in a region contacting a side surface of the trench.
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Accused Products
Abstract
A power semiconductor device may include: abase substrate including a first conductive type drift layer; a second conductive type semiconductor substrate disposed on the other surface of the base substrate; a first conductive type diffusion layer disposed in the base substrate and having an impurity concentration higher than that of the drift layer; a second conductive type well layer disposed inside of one surface of the base substrate; a trench formed from one surface of the base substrate including the well layer so as to penetrate through the diffusion layer in a depth direction; a first insulation film disposed on a surface of the base substrate; and a first electrode disposed in the trench. A peak point of an impurity doping concentration of the diffusion layer in a transverse direction may be positioned in a region contacting a side surface of the trench.
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Citations
11 Claims
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1. A power semiconductor device comprising:
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a base substrate having one surface and an other surface opposing the one surface and comprising a first conductive type drift layer; a second conductive type semiconductor substrate disposed on the other surface of the base substrate; a first conductive type diffusion layer disposed in the base substrate and having an impurity concentration higher than that of the drift layer; a second conductive type well layer disposed under the one surface of the base substrate; a trench formed from the one surface of the base substrate including the well layer so as to penetrate through the diffusion layer in a first direction; an insulation film disposed on the one surface of the base substrate including an inner wall of the trench; and a first electrode disposed in the trench, wherein a peak point of an impurity doping concentration of the diffusion layer in a second direction perpendicular to the first direction is positioned in a region contacting a side surface of the trench. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A power semiconductor device comprising:
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a base substrate having one surface and an other surface opposing the one surface and comprising a first conductive type drift layer; a second conductive type semiconductor substrate formed on the other surface of the base substrate; a first conductive type diffusion layer formed in the base substrate and having an impurity concentration higher than that of the drift layer; a second conductive type well layer formed under the one surface of the base substrate; a trench formed from the one surface of the base substrate including the well layer so as to penetrate through the diffusion layer in a depth direction; a first insulation film formed on the one surface of the base substrate including an inner wall of the trench; and a first electrode formed in the trench, wherein a peak point of an impurity doping profile of the diffusion layer in the depth direction is positioned in a region between a lower surface of the well layer and a lower surface of the trench.
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8. A method of manufacturing a power semiconductor device, the method comprising:
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preparing a base substrate having one surface and an other surface opposing the one surface and comprising a first conductive type drift layer; forming an etching mask having an open part on the one surface of the base substrate; forming a primary trench corresponding to the open part from the one surface of the base substrate in a depth direction; forming a first conductive type diffusion layer having an impurity concentration higher than the drift layer by ion implanting a first conductive type impurity into the primary trench and performing thermal diffusion treatment so that the implanted impurity diffuses toward other primary trenches adjacent thereto; completing a final trench by forming a secondary trench so as to be extended from a lower surface of the primary trench in the depth direction and penetrate through the diffusion layer; and forming a second conductive type well layer in the one surface of the base substrate. - View Dependent Claims (9, 10, 11)
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Specification