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METHODS OF FORMING ISOLATION REGIONS FOR BULK FINFET SEMICONDUCTOR DEVICES

  • US 20140315371A1
  • Filed: 04/17/2013
  • Published: 10/23/2014
  • Est. Priority Date: 04/17/2013
  • Status: Abandoned Application
First Claim
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1. A method of forming a FinFET device, comprising:

  • forming a plurality of fin-formation trenches in a semiconductor substrate, said fin-formation trenches defining a plurality of spaced-apart fins;

    forming a patterned liner layer that covers a portion of said substrate positioned between said plurality of fins while exposing portions of said substrate positioned laterally outside of said patterned liner layer; and

    performing at least one etching process on said exposed portions of said substrate through said patterned liner layer to define an isolation trench in said substrate, wherein said isolation trench has a depth that is greater than a depth of said fin-formation trenches.

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