TRENCH PATTERNING WITH BLOCK FIRST SIDEWALL IMAGE TRANSFER
First Claim
Patent Images
1. A method comprising:
- forming a tetra-layer hardmask above a substrate, the tetra-layer hardmask comprising a second hardmask layer above a first hardmask layer;
removing a portion of the second hardmask layer of the tetra-layer hardmask within a pattern region of a structure comprising the substrate and the tetra-layer hardmask;
forming a set of sidewall spacers above the tetra-layer hardmask to define a device pattern; and
transferring a portion of the device pattern into the substrate and within the pattern region of the structure.
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Abstract
A method including forming a tetra-layer hardmask above a substrate, the tetra-layer hardmask including a second hardmask layer above a first hardmask layer; removing a portion of the second hardmask layer of the tetra-layer hardmask within a pattern region of a structure comprising the substrate and the tetra-layer hardmask; forming a set of sidewall spacers above the tetra-layer hardmask to define a device pattern; and transferring a portion of the device pattern into the substrate and within the pattern region of the structure.
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Citations
20 Claims
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1. A method comprising:
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forming a tetra-layer hardmask above a substrate, the tetra-layer hardmask comprising a second hardmask layer above a first hardmask layer; removing a portion of the second hardmask layer of the tetra-layer hardmask within a pattern region of a structure comprising the substrate and the tetra-layer hardmask; forming a set of sidewall spacers above the tetra-layer hardmask to define a device pattern; and transferring a portion of the device pattern into the substrate and within the pattern region of the structure. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method comprising:
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forming a tetra-layer hardmask comprising a second hardmask layer above a first hardmask layer; defining a pattern region in the second hardmask layer; forming a device pattern above the tetra-layer hardmask; and transferring the device pattern to a substrate below the tetra-layer hardmask, wherein the device pattern is transferred to the substrate only in the pattern region defined by the second hardmask layer. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15)
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16. A method comprising:
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forming a tetra-layer hardmask above a substrate, the tetra-layer hardmask comprising a first patterning layer, a first hardmask layer, a second patterning layer, and a second hardmask layer all of which are formed one top of one another and in sequence; forming a block pattern from a photo-resist material above the tetra-layer hardmask; transferring the block pattern from the photo-resist material to the second hardmask layer, wherein the block pattern in the second hardmask layer defines a pattern region; forming a device pattern using a set of sidewall spacers above the second hardmask layer; transferring the device pattern into the first hardmask layer, only within the pattern region; and transferring the device pattern into the substrate, only within the pattern region. - View Dependent Claims (17, 18, 19, 20)
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Specification