ON-DEVICE METROLOGY
First Claim
1. A method comprising:
- receiving a first amount of measurement data associated with measurements of a first plurality of sites on a surface of a first semiconductor wafer with known variations of at least one process parameter, structure parameter, or both, wherein at least one of the first plurality of sites includes a device structure;
determining an expected response model of each of the at least one known process parameters, structure parameters, or both;
determining an input-output measurement model based at least in part on the first amount of measurement data; and
training the input-output measurement model based on parameter values determined from the expected response model.
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Abstract
Methods and systems for performing semiconductor metrology directly on device structures are presented. A measurement model is created based on measured training data collected from at least one device structure. The trained measurement model is used to calculate process parameter values, structure parameter values, or both, directly from measurement data collected from device structures of other wafers. In some examples, measurement data from multiple targets is collected for model building, training, and measurement. In some examples, the use of measurement data associated with multiple targets eliminates, or significantly reduces, the effect of under layers in the measurement result, and enables more accurate measurements. Measurement data collected for model building, training, and measurement may be derived from measurements performed by a combination of multiple, different measurement techniques.
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Citations
20 Claims
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1. A method comprising:
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receiving a first amount of measurement data associated with measurements of a first plurality of sites on a surface of a first semiconductor wafer with known variations of at least one process parameter, structure parameter, or both, wherein at least one of the first plurality of sites includes a device structure; determining an expected response model of each of the at least one known process parameters, structure parameters, or both; determining an input-output measurement model based at least in part on the first amount of measurement data; and training the input-output measurement model based on parameter values determined from the expected response model. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 20)
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11. A system comprising:
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a metrology tool including an illumination source and a detector configured to perform measurements of a target structure; and a computing system configured to; receive a first amount of measurement data from the metrology tool, the first amount of data associated with measurements of a first plurality of sites on a surface of a first semiconductor wafer with known variations of at least one process parameter, structure parameter, or both, wherein at least one of the first plurality of sites includes a device structure; determine an expected response model of each of the at least one known process parameters, structure parameters, or both; determine an input-output measurement model based at least in part on the first amount of measurement data; and train the input-output measurement model based on parameter values determined from the expected response model. - View Dependent Claims (12, 13, 14, 15, 16, 17)
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18. A method comprising:
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receiving a first amount of measurement data associated with measurements of a location on a surface of a semiconductor wafer; extracting one or more features from the first amount of measurement data, wherein the extracting of the one or more features from the amount of measurement data involves a principal component analysis; determining proximity to a desired measurement target on the surface of the semiconductor wafer based at least in part on a comparison of the one or more features with ideal features associated with the desired measurement target; and adjusting the measurement location based on the proximity to the desired measurement target. - View Dependent Claims (19)
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Specification