APPARATUS AND METHOD FOR SEMICONDUCTOR WAFER LEVELING, FORCE BALANCING AND CONTACT SENSING

• US 20140318683A1
• Filed: 07/14/2014
• Published: 10/30/2014
• Est. Priority Date: 04/15/2010
• Status: Active Grant

• Current Assignee: SUSS MicroTec Lithography GmbH (SÜSS MicroTec SE)
• Original Assignee: SUSS MicroTec Lithography GmbH (SÜSS MicroTec SE)
• Inventors: JOHNSON, HALE, GEORGE, GREGORY, BRENNEN, MICHAEL
• Granted Patent: US 9,837,295 B2
• Time in Patent Office: Days
• US Class Current: 156/64
• CPC Class Codes: H01L 21/67092 Apparatus for mechanical treatment or grinding or cutting, see the relevant groups in subclasses B24B or B28D
• CPC Class Codes: H01L 21/68 for positioning, orientation or alignment
• CPC Class Codes: H01L 21/6831 using electrostatic chucks
• CPC Class Codes: H01L 21/6833 Details of electrostatic chucks
• CPC Class Codes: Y10T 279/23 with magnetic or electrostatic means

Abstract

A wafer bonder apparatus, includes a lower chuck, an upper chuck, a process chamber and three adjustment mechanisms. The three adjustment mechanisms are arranged around a top lid spaced apart from each other and are located outside of the process chamber. Each adjustment mechanism includes a component for sensing contact to the upper chuck, a component for adjusting the pre-load force of the upper chuck, and a component for leveling the upper chuck.

Claims

1. A wafer bonder apparatus, comprising:

a lower chuck configured to support a first wafer;

an upper chuck configured to support a second wafer, wherein the second wafer is arranged opposite to the first wafer;

a process chamber formed between the upper chuck and the lower chuck;

three adjustment mechanisms arranged around a top lid spaced apart from each other and being located outside of the process chamber;

wherein each adjustment mechanism comprises;

a component for sensing contact to the upper chuck;

a component for adjusting the pre-load force of the upper chuck; and

a component for leveling the upper chuck.

2. The apparatus of claim 1, wherein each adjustment mechanism further comprises a feed-through shaft that passes through the top lid and comprises a distal end being rigidly attached to a top surface of the upper chuck and a proximal end that protrudes through the top lid.

3. The apparatus of claim 2, wherein the feed-through shaft comprises a material having a coefficient of thermal expansion (CTE) less than 2×

10<sup>−

6</sup> K<sup>−

1</sup>.

4. The apparatus of claim 2, wherein the feed-through shaft comprises Invar material.

5. The apparatus of claim 2, wherein the feed-through shaft is thermally isolated from the upper chuck via thermal break points.

6. The apparatus of claim 2, wherein the component for leveling the upper chuck comprises a micrometer, a micrometer shaft, a pivot arm, and a support plate, and wherein the pivot arm is pivotally connected to the support plate and comprises a first end connected to a distal end of the micrometer shaft and a second end connected to the feed-though shaft and wherein the micrometer comprises a resolution of at least 1 micrometer and is attached to the proximal end of the micrometer shaft, and wherein rotational motion of the micrometer causes linear motion of the micrometer shaft and the linear motion of the micrometer shaft causes linear motion of the feed-through shaft and thereby adjusts the level of the attached upper chuck.

7. The apparatus of claim 2, wherein the component for leveling the upper chuck further comprises a micrometer locking clamp configured to lock the position of the micrometer.

8. The apparatus of claim 1, wherein each adjustment mechanism further comprises a sensor for measuring the upper chuck pre-load force.

9. The apparatus of claim 1, wherein the component for sensing contact to the upper chuck comprises a contact sensor, and wherein the contact sensor is connected to the proximal end of the feed-through shaft and wherein contacting a bottom surface of the upper chuck causes the upper chuck and the attached feed-through shaft to move and the contact sensor registers a signal.

10. The apparatus of claim 9, wherein the component for sensing contact to the upper chuck further comprises a contact guide and pre-load spring and a spherical bearing interface, and wherein the spherical bearing interface is configured to contact a thrust washer that surrounds the feed-through shaft.

11. The apparatus of claim 1, wherein the component for adjusting the pre-load force of the upper chuck comprises a screw and a tension spring, and wherein the tension spring comprises a distal end connected to the top surface of the upper chuck and a proximal end connected to the screw and wherein rotating the screw adjusts the spring tension and thereby the pre-load force of the upper chuck.

12. The apparatus of claim 11, wherein the screw further comprises a plug with a swivel bearing capture and the swivel bearing capture retains a swivel bearing that connects to the proximal end of the tension spring.

13. The apparatus of claim 11, wherein the component for adjusting the pre-load force of the upper chuck further comprises a circular clip configured to limit upward motion of the tension spring.

14. The apparatus of claim 1, further comprising a computer application configured to provide images and positions of the three adjustment mechanisms on a display, and to control and guide motion of the upper chuck, via the component for sensing contact, and wherein when contact to the upper chuck is detected the images of the adjustment mechanisms where contact occurred light up.

15. The apparatus of claim 1, wherein the lower chuck comprises an electrostatic chuck.

16. The apparatus of claim 15, wherein the electrostatic chuck comprises a ceramic heater with integrated heating wires, a thin dielectric layer on a top surface of the ceramic heater and electrical interconnections.

17. The apparatus of claim 16, wherein the electrical interconnections comprise an electrode block, and a wire conductor surrounded by a crimp ferrule, and wherein the electrode block is brazed at a bottom surface of the ceramic heater and is placed on top of the crimp ferrule and wherein the electrode block, the crimp ferrule and wire conductor are located within an edge opening formed at an edge of the bottom surface of the ceramic heater.

18. The apparatus of claim 17, further comprising a metal clamping disk and a spring washer and wherein the metal clamping disk and the spring washer are also located within the edge opening and wherein the electrode block presses against the crimp ferrule and the crimp ferrule presses against the clamping disk and the clamping disk presses against the spring washer.

19. A method for wafer bonding, comprising:

providing a lower chuck configured to support a first wafer;

providing an upper chuck configured to support a second wafer, wherein the second wafer is arranged opposite to the first wafer;

providing a process chamber formed between the upper chuck and the lower chuck;

providing three adjustment mechanisms arranged around a top lid at an angle of 120 degrees from each other and being located outside of the process chamber, wherein each adjustment mechanism comprises a component for sensing contact to the upper chuck, a component for adjusting the pre-load force of the upper chuck, and a component for leveling the upper chuck.

20. The method of claim 19, further comprising adjusting manually the pre-load force and the leveling of the upper chuck and guiding contact to the upper chuck via a computer application.

21. The method of claim 20, wherein the computer application is configured to provide images and positions of the three adjustment mechanisms on a display, and to control and guide motion of the upper chuck via the component for sensing contact, and wherein when contact to the upper chuck is detected the images of the adjustment mechanisms where contact occurred light up.

22. A wafer bonder apparatus, comprising:

a lower chuck configured to support a first wafer;

an upper chuck configured to support a second wafer, wherein the second wafer is arranged opposite to the first wafer;

a process chamber formed between the upper chuck and the lower chuck;

wherein the lower chuck comprises an electrostatic chuck.

23. The apparatus of claim 22, wherein the electrostatic chuck comprises a ceramic heater with integrated heating wires, a thin dielectric layer on a top surface of the ceramic heater and electrical interconnections.

24. The apparatus of claim 23, wherein the electrical interconnections comprise an electrode block, and a wire conductor surrounded by a crimp ferrule, and wherein the electrode block is brazed at a bottom surface of the ceramic heater and is placed on top of the crimp ferrule and wherein the electrode block, the crimp ferrule and wire conductor are located within an edge opening formed at an edge of the bottom surface of the ceramic heater.

25. The apparatus of claim 24, further comprising a metal clamping disk and a spring washer and wherein the metal clamping disk and the spring washer are also located within the edge opening and wherein the electrode block presses against the crimp ferrule and the crimp ferrule presses against the clamping disk and the clamping disk presses against the spring washer.