LIGHT RECEIVING ELEMENT AND METHOD FOR MANUFACTURING SAME
First Claim
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1. A light-receiving element including a pixel comprising:
- a semiconductor substrate having a back surface including a light-incident surface;
a light-receiving layer for receiving light, the light-receiving layer being disposed on the semiconductor substrate;
a contact layer disposed on the light-receiving layer;
a reaction-preventing film disposed on the contact layer, the reaction-preventing film having an opening; and
a pixel electrode disposed on the reaction-preventing film,wherein the pixel electrode is formed in the opening, andthe pixel electrode is in ohmic contact with the contact layer through the opening.
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Abstract
A light-receiving element includes a light-receiving layer for receiving light, the light-receiving layer being disposed on a semiconductor substrate, a contact layer disposed on the light-receiving layer, and a pixel electrode that is in ohmic contact with the contact layer. A back surface of the semiconductor substrate functions as a light-incident surface, and a reaction-preventing film for preventing a chemical reaction between the contact layer and the pixel electrode is interposed in a predetermined region between the contact layer and the pixel electrode.
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Citations
11 Claims
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1. A light-receiving element including a pixel comprising:
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a semiconductor substrate having a back surface including a light-incident surface; a light-receiving layer for receiving light, the light-receiving layer being disposed on the semiconductor substrate; a contact layer disposed on the light-receiving layer; a reaction-preventing film disposed on the contact layer, the reaction-preventing film having an opening; and a pixel electrode disposed on the reaction-preventing film, wherein the pixel electrode is formed in the opening, and the pixel electrode is in ohmic contact with the contact layer through the opening. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method for manufacturing a light-receiving element including a pixel, the method comprising the steps of:
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forming a light-receiving layer on a semiconductor substrate; forming a contact layer on the light-receiving layer; forming a reaction-preventing film on the contact layer, the reaction-preventing film has a first opening at a peripheral portion of the reaction-preventing film, the contact layer being exposed through the first opening; forming a pixel electrode on the reaction-preventing film and in the first opening of the reaction-preventing film, the pixel electrode being in contact with the contact layer through the first opening; and conducting heat treatment to the pixel electrode so that the pixel electrode in the first opening and the contact layer chemically react each other to establish ohmic contact. - View Dependent Claims (8, 9, 10, 11)
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Specification