SEMICONDUCTOR LIGHT-EMITTING ELEMENT

• US 20140319571A1
• Filed: 07/14/2014
• Published: 10/30/2014
• Est. Priority Date: 02/21/2012
• Status: Abandoned Application

• Current Assignee: Fujifilm Corporation (Fujifilm Holdings Corporation)
• Original Assignee: Fujifilm Corporation (Fujifilm Holdings Corporation)
• Inventors: HAKUTA, Shinya, SONODA, Shinichiro
• Application Number:
  US14/330,457
• Publication Number:
  US 20140319571A1
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 33/08 with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body H01L27/15 takes precedence
• CPC Class Codes: H01L 33/10 with a light reflecting structure, e.g. semiconductor Bragg reflector
• CPC Class Codes: H01L 33/105 with a resonant cavity structure
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01S 5/18383 with periodic active regions at nodes or maxima of light intensity

Abstract

In a surface emission-type semiconductor light-emitting element including a DBR layer, a variation in light intensity due to a temperature change in the formation of a large number of elements manufactured from one wafer is suppressed while maintaining a light intensity enhancement effect. In the semiconductor light-emitting element that outputs emitted light having a predetermined emission peak wavelength λ, including at least a substrate 10, a lower distributed Bragg reflective layer 12 provided on the substrate 10, and a light-emitting layer 20 provided on a lower distributed Bragg reflective layer 12, the light-emitting layer 20 includes one or more sets of two active layers 22 arranged at a distance of (1+2m)λ/4n in an inactive layer 21, λ, is the emission peak wavelength, n is a refractive index of the light-emitting layer 20, and m is an integer of 0 or greater.

Claims

1. A semiconductor light-emitting element that outputs emitted light having a predetermined emission peak wavelength, comprising at least:

a substrate;

a lower distributed Bragg reflective layer provided on the substrate;

and a light-emitting layer provided on the lower distributed Bragg reflective layer,

wherein the light-emitting layer has a structure in which one or more sets of two active layers arranged at a distance of (1+2m)λ

/4n are included in an inactive layer, λ

is the emission peak wavelength, n is a refractive index of the light-emitting layer, and m is an integer of 0 or greater.

2. The semiconductor light-emitting element according to claim 1, wherein a thickness of the light-emitting layer is kλ

/2n, λ

, is the emission peak wavelength, n is a refractive index of the light-emitting layer, and k is an integer of 1 or greater.

3. The semiconductor light-emitting element according to claim 1, wherein the integer m is 0.

4. The semiconductor light-emitting element according to claim 2, wherein the integer m is 0.

5. The semiconductor light-emitting element according to claim 1, wherein the active layers are arranged at positions which are vertically symmetric with respect to a central position of the light-emitting layer in a thickness direction.

6. The semiconductor light-emitting element according to claim 2, wherein the active layers are arranged at positions which are vertically symmetric with respect to a central position of the light-emitting layer in a thickness direction.

7. The semiconductor light-emitting element according to claim 1, wherein a thickness of each of the active layers is equal to or less than 10 nm.

8. The semiconductor light-emitting element according to claim 2, wherein a thickness of each of the active layers is equal to or less than 10 nm.

9. The semiconductor light-emitting element according to claim 5, wherein a thickness of each of the active layers is equal to or less than 10 nm.

10. The semiconductor light-emitting element according to claim 6, wherein a thickness of each of the active layers is equal to or less than 10 nm.

11. The semiconductor light-emitting element according to claim 1, wherein a total thickness of the active layers included in the light-emitting layer is equal to or greater than λ

/4n, and the semiconductor light-emitting element functions as a light-emitting diode.

12. The semiconductor light-emitting element according to claim 2, wherein a total thickness of the active layers included in the light-emitting layer is equal to or greater than λ

/4n, and the semiconductor light-emitting element functions as a light-emitting diode.

13. The semiconductor light-emitting element according to claim 9, wherein a total thickness of the active layers included in the light-emitting layer is equal to or greater than λ

/4n, and the semiconductor light-emitting element functions as a light-emitting diode.

14. The semiconductor light-emitting element according to claim 10, wherein a total thickness of the active layers included in the light-emitting layer is equal to or greater than λ

/4n, and the semiconductor light-emitting element functions as a light-emitting diode.

15. The semiconductor light-emitting element according to claim 1, wherein an upper distributed Bragg reflective layer is included on the light-emitting layer.

16. The semiconductor light-emitting element according to claim 2, wherein an upper distributed Bragg reflective layer is included on the light-emitting layer.

17. The semiconductor light-emitting element according to claim 1, wherein an antireflective layer for the emitted light is included on the light-emitting layer.

18. The semiconductor light-emitting element according to claim 2, wherein an antireflective layer for the emitted light is included on the light-emitting layer.

19. The semiconductor light-emitting element according to claim 1, wherein at least one phase change layer having a thickness of j˜

λ

/2n is included in the lower distributed Bragg reflective layer, n is a refractive index of the phase change layer, and j is an integer of 1 or greater.

20. The semiconductor light-emitting element according to claim 2, wherein at least one phase change layer having a thickness of j·

λ

/2n is included in the lower distributed Bragg reflective layer, n is a refractive index of the phase change layer, and j is an integer of 1 or greater.