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MAGNETIC MEMORY ELEMENT AND MEMORY APPARATUS HAVING MULTIPLE MAGNETIZATION DIRECTIONS

  • US 20140319633A1
  • Filed: 07/14/2014
  • Published: 10/30/2014
  • Est. Priority Date: 11/30/2011
  • Status: Active Grant
First Claim
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1. A memory element, comprising a layered structure including:

  • a memory layer having a magnetization direction configured to be changed by in response to a current applied in a lamination direction of the layered structure to record information in the memory layer and at least including;

    a first ferromagnetic layer,a bonding layer laminated on the first ferromagnetic layer, anda second ferromagnetic layer laminated on the bonding layer;

    a fixed-magnetization layer having a fixed magnetization direction; and

    an intermediate layer provided between the memory layer and the fixed-magnetization layer,wherein, at a predetermined current, the memory layer is configured to retain the magnetization direction of the first ferromagnetic layer and the second ferromagnetic layer at a predetermined angle, wherein the predetermined angle is more than 0 degrees and less than 180 degrees relative to the fixed magnetization direction.

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