SUBSTRATE INTEGRATED WAVEGUIDE HORN ANTENNA

• US 20140320364A1
• Filed: 04/26/2013
• Published: 10/30/2014
• Est. Priority Date: 04/26/2013
• Status: Abandoned Application

• Current Assignee: Blackberry Limited
• Original Assignee: Research In Motion Limited (Blackberry Limited)
• Inventors: Gu, Huanhuan, Kanj, Houssam, Warden, James, DeVries, Christopher
• Application Number:
  US13/871,054
• Publication Number:
  US 20140320364A1
• Time in Patent Office: Days
• US Class Current: 343/786
• CPC Class Codes: H01P 5/107 Hollow-waveguide/strip-line transitions
• CPC Class Codes: H01Q 13/0225 of non-circular cross-section H01Q13/0216 takes precedence
• CPC Class Codes: Y10T 29/49016 Antenna or wave energy "plumbing" making

Abstract

Embodiments are directed to a substrate integrated waveguide (SIW) antenna structure comprising: a first layer configured to route a signal, at least a second layer configured for antenna use coupled to the first layer, and a SIW antenna flared in the E-plane. Embodiments are directed to a method comprising: fabricating a first layer configured to route a signal, fabricating at least a second layer configured for antenna use, coupling the first layer and the at least a second layer, and flaring a substrate integrated waveguide (SIW) antenna in the E-plane.

Claims

1. A substrate integrated waveguide (SIW) antenna structure comprising:

a first layer configured to route a signal;

at least a second layer configured for antenna use coupled to the first layer; and

a SIW antenna flared in the E-plane.

2. The SIW antenna structure of claim 1, wherein the signal comprises a 60 GHz signal.

3. The SIW antenna structure of claim 1, wherein the SIW antenna occupies a plurality of layers and extends in a direction perpendicular to a plane of a circuit substrate in a stair-cased fashion.

4. The SIW antenna structure of claim 1, wherein the first layer is implemented as a microstrip line feeding structure, and wherein the first layer is substantially thinner than the at least a second layer.

5. The SIW antenna structure of claim 4, wherein the microstrip line feeding structure is configured to directly feed the SIW antenna.

6. The SIW antenna structure of claim 1, further comprising:

a plurality of matching posts;

wherein a position of the matching posts is tunable in three dimensions to provide a specified bandwidth and radiation pattern.

7. The SIW antenna structure of claim 1, wherein the SIW antenna is flared in the H-plane.

8. A method comprising:

fabricating a first layer configured to route a signal;

fabricating at least a second layer configured for antenna use;

coupling the first layer and the at least a second layer; and

flaring a substrate integrated waveguide (SIW) antenna in the E-plane.

9. The method of claim 8, wherein the signal comprises a 60 GHz signal.

10. The method of claim 8, wherein the SIW antenna occupies a plurality of layers and extends in a direction perpendicular to a plane of a circuit substrate in a stair-cased fashion.

11. The method of claim 8, further comprising:

implementing the first layer as a microstrip line feeding structure;

wherein the first layer is substantially thinner than the at least a second layer.

12. The method of claim 11, wherein the microstrip line feeding structure is configured to directly feed the SIW antenna.

13. The method of claim 8, further comprising:

positioning a plurality of matching posts to provide a specified bandwidth and radiation pattern.

14. The method of claim 8, further comprising:

flaring the SIW antenna in the H-plane.

15. The method of claim 8, further comprising:

tuning a shape of the SIW antenna to minimize signal reflections.

16. A transition structure comprising:

a microstrip line;

an antenna; and

a transition configured to connect the microstrip line to the antenna, wherein the transition comprises a taper that narrows from the antenna to the microstrip line.

17. The transition structure of claim 16, wherein the transition is configured as a linear taper.

18. The transition structure of claim 16, wherein the transition is configured as a curved taper.

19. The transition structure of claim 16, further comprising a plurality of guide walls configured to guide a wave in the transition.

20. The transition structure of claim 16, wherein the antenna is configured to operate at 60 GHz.

21. The transition structure of claim 16, wherein the antenna is at least one of a substrate integrated waveguide (SIW) antenna and a horn antenna.

22. A structure comprising:

a microstrip transition;

a horn antenna coupled to the microstrip transition; and

a plurality of guide walls configured to guide a wave in a transition between the microstrip transition and the horn antenna.

23. The structure of claim 22, wherein the microstrip transition is coupled to a microstrip line, and wherein the microstrip transition comprises a curved taper.

24. A method comprising:

identifying a transition from a microstrip line to a substrate integrated waveguide (SIW) horn antenna structure configured to operate at 60 GHz; and

selecting a geometry for the transition.

25. The method of claim 24, further comprising:

incorporating a plurality of guide walls into the transition to guide a wave in the transition.

26. The method of claim 25, further comprising:

tuning the angle, position, and the number of guide walls to obtain a specified bandwidth.