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MONOLITHIC DEVICE COMBINING CMOS WITH MAGNETORESISTIVE SENSORS

  • US 20140323337A1
  • Filed: 07/03/2014
  • Published: 10/30/2014
  • Est. Priority Date: 01/04/2012
  • Status: Active Grant
First Claim
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1. A monolithic device comprising:

  • a substrate;

    an array of sensing elements coupled to the substrate, wherein each sensing element includes a linear magnetoresistive sensor and a switching device;

    a metallic structure coupled to the substrate, wherein the metallic structure is driven by a driving signal to generate a magnetic field about the array of sensing elements;

    an analog electric drive generator coupled to the substrate, wherein the electric drive generator produces a sensor-biasing signal that biases the magnetoresistive sensors of the array;

    an analog multiplexer coupled to the substrate, wherein outputs of the array are coupled to inputs of the multiplexer through the corresponding switching device; and

    an analog signal conditioning circuit coupled to the substrate, wherein an output of the multiplexer is coupled to an input of the signal conditioning circuit;

    wherein the metallic structure includes two opposite magnetic field generator lines and a third magnetic field generator line arranged such that a magnetoresistive sensor of the array of sensing elements is between the opposite magnetic field generator lines and above the third magnetic field generator line; and

    the array, the electric drive generator, the multiplexer and signal conditioning circuit form a monolithic integrated circuit on the substrate.

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