MONOLITHIC DEVICE COMBINING CMOS WITH MAGNETORESISTIVE SENSORS
First Claim
1. A monolithic device comprising:
- a substrate;
an array of sensing elements coupled to the substrate, wherein each sensing element includes a linear magnetoresistive sensor and a switching device;
a metallic structure coupled to the substrate, wherein the metallic structure is driven by a driving signal to generate a magnetic field about the array of sensing elements;
an analog electric drive generator coupled to the substrate, wherein the electric drive generator produces a sensor-biasing signal that biases the magnetoresistive sensors of the array;
an analog multiplexer coupled to the substrate, wherein outputs of the array are coupled to inputs of the multiplexer through the corresponding switching device; and
an analog signal conditioning circuit coupled to the substrate, wherein an output of the multiplexer is coupled to an input of the signal conditioning circuit;
wherein the metallic structure includes two opposite magnetic field generator lines and a third magnetic field generator line arranged such that a magnetoresistive sensor of the array of sensing elements is between the opposite magnetic field generator lines and above the third magnetic field generator line; and
the array, the electric drive generator, the multiplexer and signal conditioning circuit form a monolithic integrated circuit on the substrate.
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Abstract
A monolithic device comprises a substrate. An array of sensing elements is coupled to the substrate, and each sensing element includes a magnetoresistive sensor. An analog electric drive generator is coupled to the substrate, and the electric drive generator produces a sensor-biasing signal that biases the magnetoresistive sensors of the array. An analog multiplexer is coupled to the substrate, and outputs of the array are coupled to inputs of the multiplexer. An analog signal conditioning circuit is coupled to the substrate, wherein at least one output of the multiplexer is coupled to at least one input of the signal conditioning circuit. The monolithic device is fabricated using both complementary metal-oxide semiconductor (i.e., CMOS) technology and thin film technology. For example, the electric drive generator, the multiplexer, and the signal conditioning circuit may be fabricated with CMOS technology, while the magnetoresistive sensors of the array are fabricated with thin film technology.
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Citations
20 Claims
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1. A monolithic device comprising:
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a substrate; an array of sensing elements coupled to the substrate, wherein each sensing element includes a linear magnetoresistive sensor and a switching device; a metallic structure coupled to the substrate, wherein the metallic structure is driven by a driving signal to generate a magnetic field about the array of sensing elements; an analog electric drive generator coupled to the substrate, wherein the electric drive generator produces a sensor-biasing signal that biases the magnetoresistive sensors of the array; an analog multiplexer coupled to the substrate, wherein outputs of the array are coupled to inputs of the multiplexer through the corresponding switching device; and an analog signal conditioning circuit coupled to the substrate, wherein an output of the multiplexer is coupled to an input of the signal conditioning circuit; wherein the metallic structure includes two opposite magnetic field generator lines and a third magnetic field generator line arranged such that a magnetoresistive sensor of the array of sensing elements is between the opposite magnetic field generator lines and above the third magnetic field generator line; and the array, the electric drive generator, the multiplexer and signal conditioning circuit form a monolithic integrated circuit on the substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A monolithic device comprising:
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a substrate; an array of sensing elements coupled to the substrate, wherein each sensing element includes a magnetoresistive sensor; a metallic structure coupled to the substrate, wherein the metallic structure is driven by a driving signal to generate a magnetic field about the array of sensing elements; a drive generator coupled to the substrate, wherein the drive generator produces a sensor-biasing signal that biases the magnetoresistive sensors of the array; and an analog multiplexer coupled to the substrate, wherein outputs of the array are coupled to inputs of the multiplexer; wherein; the metallic structure includes two opposite magnetic field generator lines and a third magnetic field generator line arranged such that a magnetoresistive sensor of the array of sensing elements is between the opposite magnetic field generator lines and above the third magnetic field generator line; and the array, the electric drive generator, and the multiplexer form a monolithic integrated circuit on the substrate. - View Dependent Claims (13)
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14. A method comprising:
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providing a monolithic device comprising; a substrate; an array of sensing elements coupled to the substrate, wherein each sensing element includes a linear magnetoresistive sensor and a switching device; a metallic structure coupled to the substrate, wherein the metallic structure is driven by a driving signal to generate a magnetic field about the array of sensing elements; an analog electric drive generator coupled to the substrate, wherein the electric drive generator produces a sensor-biasing signal that biases the magnetoresistive sensors of the array; an analog multiplexer coupled to the substrate, wherein outputs of the array are coupled to inputs of the multiplexer; and an analog signal conditioning circuit coupled to the substrate, wherein an output of the multiplexer is coupled to an input of the signal conditioning circuit and the signal conditioning circuit produces an output based at least in part on the input of the signal conditioning circuit; wherein; the metallic structure includes two opposite gradient magnetic field generator lines and a homogeneous magnetic field generator line arranged such that a magnetoresistive sensor of the array of sensing elements is between the opposite gradient magnetic field generator lines and above the homogeneous magnetic field generator line; and the array, the electric drive generator, the multiplexer and signal conditioning circuit form a monolithic integrated circuit on the substrate; - View Dependent Claims (15, 16, 17, 18, 19, 20)
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Specification