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DATA WRITING METHOD, MEMORY CONTROLLER AND MEMORY STORAGE APPARATUS

  • US 20140325118A1
  • Filed: 07/05/2013
  • Published: 10/30/2014
  • Est. Priority Date: 04/30/2013
  • Status: Active Grant
First Claim
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1. A data writing method, for writing data into a physical erasing unit comprising a plurality of memory cells, a plurality of word lines, and a plurality of bit lines, wherein each of the memory cells electrically connected to one of the word lines and one of the bit lines, the memory cells constitute a plurality of physical programming units comprising a plurality of lower physical programming units and a plurality of upper physical programming units, and a speed of writing data into the lower physical programming units is higher than a speed of writing data into the upper physical programming units, the data writing method comprising:

  • dividing the data into a plurality of information frames in a unit of one physical programming unit, wherein the number of the information frames is smaller than the number of the physical programming units of the physical erasing unit; and

    filling the lower physical programming units with the information frames and then writing the rest of the information frames to the upper physical programming units, or programming an auxiliary pattern into the memory cells on at least one second word line, wherein the at least one second word line is adjacent to at least one first word line among the word lines, and the at least one first word line stores at least a portion of the information frames, and the auxiliary pattern is invalid data,wherein, in the physical erasing unit, the at least one first word line is not adjacent to a third word line, and a storage state of the memory cells on the third word line is an erasing state.

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