METHOD FOR MANUFACTURING OXIDE SEMICONDUCTOR THIN FILM TRANSISTOR, AND ACTIVE OPERATING DISPLAY DEVICE AND ACTIVE OPERATING SENSOR DEVICE USING SAME

• US 20140327001A1
• Filed: 07/21/2014
• Published: 11/06/2014
• Est. Priority Date: 01/20/2012
• Status: Abandoned Application

• Current Assignee: University-Industry Cooperation Group of KyungHee University
• Original Assignee: University-Industry Cooperation Group of KyungHee University
• Inventors: Jang, Jin, Kang, Dong Han, Mativenga, Mallory
• Application Number:
  US14/336,716
• Publication Number:
  US 20140327001A1
• Time in Patent Office: Days
• US Class Current: 257/43
• CPC Class Codes: H01L 27/1296 adapted to increase the uniformity of device parameters
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

The present invention relates to a method for manufacturing an oxide semiconductor thin film transistor and to an actively operating display device and actively operating sensor display device using the same. A method for manufacturing an oxide semiconductor thin film transistor includes: forming a gate electrode by depositing and patterning a gate layer over a substrate; sequentially depositing a gate insulation film, an oxide semiconductor, and an etch stopper over the gate electrode and patterning the etch stopper; patterning the oxide semiconductor; forming a source electrode and a drain electrode over the patterned oxide semiconductor; and depositing a protective layer over the source electrode and the drain electrode and forming a contact hole in the protective layer, where the oxide semiconductor is formed to a thickness that is smaller than or equal to 4 nm.

Claims

1. A method for manufacturing an oxide semiconductor thin film transistor, the method comprising:

a first step of forming a gate electrode by depositing and patterning a gate layer over a substrate;

a second step of sequentially depositing a gate insulation film, an oxide semiconductor, and an etch stopper over the gate electrode and patterning the etch stopper;

a third step of patterning the oxide semiconductor;

a fourth step of forming a source electrode and a drain electrode over the patterned oxide semiconductor; and

a fifth step of depositing a protective layer over the source electrode and the drain electrode and forming a contact hole in the protective layer,

wherein the oxide semiconductor has a thickness smaller than or equal to 4 nm.

2. The method of claim 1, wherein the thickness of the oxide semiconductor is smaller than or equal to 3 nm.

3. The method of claim 1, wherein a second oxide semiconductor is deposited over the oxide semiconductor and the etch stopper.

4. The method of claim 1, further comprising, before the first step:

depositing a silicon oxidation protection film over the substrate.

5. The method of claim 1, wherein the oxide semiconductor includes any one of indium gallium zinc oxide (Amorphous-InGaZnO4), zinc oxide (ZnO), indium zinc oxide (IZO), indium tin oxide (ITO), zinc tin oxide (ZTO), gallium zinc oxide (GZO), hafnium indium zinc oxide (HIZO), zinc indium tin oxide (ZITO) and aluminum zinc tin oxide (AZTO) in an amorphous or a polycrystalline form.

6. The method of claim 1, wherein the gate insulation film and the protective layer are formed as a silicon oxide film or a silicon nitride film.

7. The method of claim 1, wherein the substrate is formed as a glass substrate, a plastic substrate, a silicon substrate, or a polymer material formed over the glass substrate, and the source electrode and the drain electrode are formed including molybdenum (Mo) or indium tin oxide (ITO).

8. A method for manufacturing an oxide semiconductor thin film transistor, the method comprising:

a first step of sequentially depositing a buffer layer, an oxide semiconductor, a gate insulation film, and a gate layer over a substrate;

a second step of forming a gate electrode by patterning the gate layer;

a third step of patterning the oxide semiconductor;

a fourth step of depositing a protective layer over the oxide semiconductor and forming a contact hole in the protective layer; and

a fifth step of forming a source electrode and a drain electrode over the contact hole,

wherein the oxide semiconductor has a thickness smaller than or equal to 4 nm.

9-12. -12. (canceled)

13. A method for manufacturing an oxide semiconductor thin film transistor, the method comprising:

a first step of depositing and patterning a source electrode and a drain electrode over a substrate;

a second step of depositing an oxide semiconductor, a gate insulation film, and a gate layer over the source electrode and the drain electrode;

a third step of patterning the gate insulation film and the gate layer;

a fourth step of patterning the oxide semiconductor; and

a fifth step of depositing a protective layer over the patterned gate insulation film and the oxide semiconductor and forming a contact hole,

wherein the oxide semiconductor has a thickness smaller than or equal to 4 nm.

14-17. -17. (canceled)

18. A method for manufacturing an oxide semiconductor thin film transistor, the method comprising:

a first step of depositing a buffer layer and an oxide semiconductor over a substrate and patterning the oxide semiconductor;

a second step of depositing and patterning a source electrode and a drain electrode over the oxide semiconductor;

a third step of forming a gate pattern by depositing a gate insulation film and a gate layer over the source electrode and the drain electrode and patterning the gate layer; and

a fourth step of forming and patterning a protective layer over the gate pattern,

wherein the oxide semiconductor has a thickness smaller than or equal to 4 nm.

19-22. -22. (canceled)

23. A method for manufacturing an oxide semiconductor thin film transistor, the method comprising:

a first step of forming a gate electrode by depositing and patterning a gate layer over a substrate;

a second step of depositing a gate insulation film and an oxide semiconductor over the gate electrode;

a third step of patterning the oxide semiconductor;

a fourth step of forming a source electrode and a drain electrode over the patterned oxide semiconductor; and

a fifth step of depositing a protective layer over the source electrode and the drain electrode and forming a contact hole in the protective layer,

wherein the oxide semiconductor has a thickness smaller than or equal to 4 nm.

24-27. -27. (canceled)

28. A method for manufacturing an oxide semiconductor thin film transistor, the method comprising:

a first step of forming a gate electrode by depositing and patterning a gate layer over a substrate;

a second step of depositing a gate insulation film, a source electrode, and a drain electrode over the gate electrode;

a third step of patterning the source electrode and the drain electrode;

a fourth step of depositing and patterning an oxide semiconductor over the patterned source electrode and drain electrode; and

a fifth step of depositing a protective layer over the patterned oxide semiconductor and forming a contact hole in the protective layer,

wherein the oxide semiconductor has a thickness smaller than or equal to 4 nm.

29-32. -32. (canceled)

33. A thin film transistor comprising a substrate, a gate electrode, a source electrode, a drain electrode, and an oxide semiconductor, wherein the oxide semiconductor has a thickness smaller than or equal to 4 nm.

34. (canceled)