LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME, AND LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE LIGHT EMITTING DEVICE

• US 20140327032A1
• Filed: 07/21/2014
• Published: 11/06/2014
• Est. Priority Date: 07/21/2008
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: KIM, Deung Kwan, PARK, Jun Suk, SIN, Han
• Granted Patent: US 9,680,064 B2
• Time in Patent Office: Days
• US Class Current: 257/99
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/181 Encapsulation
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/50 Wavelength conversion elements
• CPC Class Codes: H01L 33/54 having a particular shape

Abstract

Disclosed are a light emitting device, a conductive substrate; a second electrode layer on the conductive substrate and including a center portion and a peripheral portion surrounding the center portion; a protective layer on the peripheral portion of the second electrode layer; and a light emitting structure including a second conductive semiconductor layer on the second electrode layer, an active layer on the second conductive semiconductor layer and a first conductive semiconductor layer on the active layer; and a first electrode layer on the first conductive semiconductor layer, wherein the second conductive semiconductor layer includes edge portions extending outside of the light emitting structure.

Claims

1. A light emitting device comprising:

a conductive substrate;

a second electrode layer on the conductive substrate and including a center portion and a peripheral portion surrounding the center portion;

a protective layer on the peripheral portion of the second electrode layer;

a light emitting structure including a second conductive semiconductor layer on the second electrode layer, an active layer on the second conductive semiconductor layer and a first conductive semiconductor layer on the active layer; and

a first electrode layer on the first conductive semiconductor layer, wherein the second conductive semiconductor layer includes edge portions extending outside of the light emitting structure.

2. The light emitting device according to claim 1, wherein a bottom surface of the second conductive semiconductor layer contacts the second electrode layer.

3. The light emitting device according to claim 1, wherein a lateral width of the protection layer is substantially the same with a lateral width of the peripheral portion of the second electrode layer.

4. The light emitting device according to claim 1, wherein the protective layer surrounds the center portion of the second electrode layer.

6. The light emitting device according to claim 1, wherein the second electrode layer includes at least one of Ag, Ni, Al, Pt, or Au.

7. The light emitting device according to claim 1, wherein a lateral width of the center portion of the second electrode layer is greater than a lateral width of the peripheral portion of the second electrode.

8. The light emitting device according to claim 1, wherein the protection layer is directly in contact with the second conductive semiconductor layer.

9. The light emitting device according to claim 1, wherein a lateral width of the second conductive semiconductor layer is greater than a lateral width of the first conductive semiconductor layer.

16. The light emitting device according to claim 1, wherein the second electrode layer includes at least one of Ag, Ni, Al, Pt. or Au.

10. A light emitting device comprising:

a conductive substrate;

a second electrode layer on the conductive substrate and including a center portion and a peripheral portion surrounding the center portion;

a protective layer on the peripheral portion of the second electrode layer;

a light emitting structure including a second conductive semiconductor layer on the second electrode layer, an active layer on the second conductive semiconductor layer and a first conductive semiconductor layer on the active layer; and

a first electrode layer on the first conductive semiconductor layer,

wherein the center portion has a thickness different from that of the peripheral portion. and

wherein the second conductive semiconductor layer includes edge portions extending outside of the light emitting structure.

11. The light emitting device according to claim 10, wherein a lateral width of the center portion of the second electrode layer is greater than a lateral width of the peripheral portion of the second electrode.

12. The light emitting device according to claim 10, wherein a bottom surface of the second conductive semiconductor layer contacts the second electrode layer.

13. The light emitting device according to claim 10, wherein a lateral width of the protection layer is substantially same with a lateral width of the peripheral portion of the second electrode layer.

14. The light emitting device according to claim 10, wherein a lateral width of the second conductive semiconductor layer is greater than a lateral width of the first conductive semiconductor layer.

15. The light emitting device according to claim 10, wherein the protective layer surrounds the center portion of the second electrode layer.