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METHOD FOR MANUFACTURING LIGHT EMITTING DIODES

  • US 20140329347A1
  • Filed: 03/20/2014
  • Published: 11/06/2014
  • Est. Priority Date: 05/02/2013
  • Status: Abandoned Application
First Claim
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1. A method for manufacturing a light emitting diode, comprising:

  • providing a substrate;

    growing an undoped GaN layer on the substrate, the undoped GaN layer comprising an upper surface away from the substrate and a lower surface contacting the substrate;

    etching the upper surface of the undoped GaN layer to form a plurality of cavities;

    growing an Distributed Bragg Reflector layer on the upper surface of the undoped GaN layer, the Distributed Bragg Reflector layer conformably extending over the upper surface defining bottoms of the cavities and the upper surface around the cavities; and

    forming sequentially an N-type GaN layer, an active layer and a P-type GaN layer on the Distributed Bragg Reflector Layer.

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