Self-Aligned Wrapped-Around Structure
First Claim
1. A method of making a self-aligned vertical gate-all-around device, comprising:
- forming a spacer around an exposed portion of a semiconductor column projecting from a gate layer;
forming a photoresist over a protected portion of the gate layer and a first portion of the spacer;
etching away an unprotected portion of the gate layer disposed outside a periphery collectively defined by the spacer and the photoresist to form a gate having a footer portion and a non-footer portion, the non-footer portion and the footer portion collectively encircling the semiconductor column; and
removing the photoresist and the spacer.
1 Assignment
0 Petitions
Accused Products
Abstract
An embodiment vertical wrapped-around structure and method of making. An embodiment method of making a self-aligned vertical structure-all-around device including forming a spacer around an exposed portion of a semiconductor column projecting from a structure layer, forming a photoresist over a protected portion of the structure layer and a first portion of the spacer, etching away an unprotected portion of the structure layer disposed outside a periphery collectively defined by the spacer and the photoresist to form a structure having a footer portion and a non-footer portion, the non-footer portion and the footer portion collectively encircling the semiconductor column, and removing the photoresist and the spacer.
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Citations
20 Claims
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1. A method of making a self-aligned vertical gate-all-around device, comprising:
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forming a spacer around an exposed portion of a semiconductor column projecting from a gate layer; forming a photoresist over a protected portion of the gate layer and a first portion of the spacer; etching away an unprotected portion of the gate layer disposed outside a periphery collectively defined by the spacer and the photoresist to form a gate having a footer portion and a non-footer portion, the non-footer portion and the footer portion collectively encircling the semiconductor column; and removing the photoresist and the spacer. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method of making a self-aligned vertical gate-all-around device, comprising:
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depositing a gate layer around an initial exposed portion of a semiconductor column and over an initial oxide layer; forming an additional oxide layer over the gate layer and planarizing the additional oxide layer; performing an etchback process to recess the additional oxide layer and a portion of the gate layer wrapped around the initially exposed portion of the semiconductor column; forming a spacer around the gate layer remaining around the initially exposed portion of the semiconductor column and a subsequently exposed portion of the semiconductor column; forming a photoresist over a protected portion of the gate layer and a first portion of the spacer; etching away an unprotected portion of the gate layer disposed outside a periphery collectively defined by the spacer and the photoresist to form a gate having a footer portion and a non-footer portion, the footer portion and the non-footer portion collectively encircling the semiconductor column; and removing the photoresist and the spacer. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. A vertical gate-all-around transistor, comprising:
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an oxide layer disposed over a semiconductor layer; a semiconductor column projecting from the oxide layer; and a gate disposed over the oxide layer, the gate having a footer portion and a non-footer portion collectively encircling the semiconductor column. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification