DISPLAY DEVICE AND ELECTRONIC DEVICE INCLUDING THE DISPLAY DEVICE
First Claim
1. A display device comprising:
- an insulating layer over a first substrate;
a transistor comprising a gate electrode over the first substrate, a gate insulating layer over the gate electrode, an oxide semiconductor layer over the gate insulating layer, and a source electrode and a drain electrode over and in contact with the oxide semiconductor layer;
a pixel electrode comprising an oxide over the insulating layer;
a capacitor comprising a first electrode, a second electrode over the first electrode, and a dielectric layer between the first electrode and the second electrode;
an oxide insulating layer over and in contact with the oxide semiconductor layer, and the source electrode and the drain electrode, the oxide insulating layer having an opening which overlaps with the pixel electrode and the first electrode; and
a nitride insulating layer covering the oxide insulating layer, the nitride insulating layer being in contact with part of the pixel electrode,wherein the oxide semiconductor layer includes a channel formation region,wherein one of the source electrode and the drain electrode is over and in contact with the pixel electrode,wherein the gate electrode and the first electrode are on the same surface and made of the same material,wherein a first portion of the insulating layer serves as the gate insulating layer and a second portion of the insulating layer serves as the dielectric layer of the capacitor,wherein a portion of the pixel electrode serves as the second electrode of the capacitor, andwherein the oxide semiconductor layer and the pixel electrode contain indium, zinc, and a metal element.
1 Assignment
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Accused Products
Abstract
To provide a display device including a transistor that includes an oxide semiconductor and has favorable characteristics, a pixel electrode electrically connected to the transistor, and a capacitor electrically connected to the pixel electrode. To provide a display device that can be manufactured at low cost. The display device includes a display element including a pixel electrode, a transistor that performs switching of the display element and includes a first oxide semiconductor layer serving as a channel formation region, a capacitor that is electrically connected to the display element and includes a dielectric layer between a pair of electrodes. The pixel electrode is a second oxide semiconductor layer formed on the same surface as that on which the first oxide semiconductor layer is formed, and also serves as one electrode of the capacitor.
34 Citations
20 Claims
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1. A display device comprising:
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an insulating layer over a first substrate; a transistor comprising a gate electrode over the first substrate, a gate insulating layer over the gate electrode, an oxide semiconductor layer over the gate insulating layer, and a source electrode and a drain electrode over and in contact with the oxide semiconductor layer; a pixel electrode comprising an oxide over the insulating layer; a capacitor comprising a first electrode, a second electrode over the first electrode, and a dielectric layer between the first electrode and the second electrode; an oxide insulating layer over and in contact with the oxide semiconductor layer, and the source electrode and the drain electrode, the oxide insulating layer having an opening which overlaps with the pixel electrode and the first electrode; and a nitride insulating layer covering the oxide insulating layer, the nitride insulating layer being in contact with part of the pixel electrode, wherein the oxide semiconductor layer includes a channel formation region, wherein one of the source electrode and the drain electrode is over and in contact with the pixel electrode, wherein the gate electrode and the first electrode are on the same surface and made of the same material, wherein a first portion of the insulating layer serves as the gate insulating layer and a second portion of the insulating layer serves as the dielectric layer of the capacitor, wherein a portion of the pixel electrode serves as the second electrode of the capacitor, and wherein the oxide semiconductor layer and the pixel electrode contain indium, zinc, and a metal element. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A display device comprising:
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an insulating layer over a first substrate; a pixel electrode over the insulating layer; a transistor comprising a gate electrode over the first substrate, a gate insulating layer over the gate electrode, and an oxide semiconductor layer electrically connected to the pixel electrode; and a capacitor including a first electrode, second electrode over the first electrode, and a dielectric layer between the first electrode and the second electrode, wherein the oxide semiconductor layer includes a channel formation region, wherein the oxide semiconductor layer has a layered structure of a first oxide semiconductor layer and a second oxide semiconductor layer on the first oxide semiconductor layer, wherein the pixel electrode has a layered structure of a first oxide layer and a second oxide layer on the first oxide layer, wherein a portion of the pixel electrode serves as the second electrode of the capacitor, wherein the gate electrode and the first electrode are on the same surface and made of the same material, wherein a first portion of the insulating layer serves as the gate insulating layer and a second portion of the insulating layer serves as the dielectric layer of the capacitor, wherein the first oxide semiconductor layer and the first oxide layer contain indium, zinc, and a metal element, and wherein the second oxide semiconductor layer and the second oxide layer contain indium. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15, 16)
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17. A method for forming a display device comprising the steps of:
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forming a conductive layer over a substrate; forming a first electrode and a second electrode by patterning the conductive layer; forming a first insulating layer covering the first electrode and the second electrode; forming an oxide semiconductor layer over the first insulating layer; forming a first oxide semiconductor layer overlapping with the first electrode and a second oxide semiconductor layer overlapping with the electrode by patterning the oxide semiconductor layer; forming a source electrode and a drain electrode over and in contact with the first oxide semiconductor layer; forming an oxide insulating layer over and in contact with the first oxide semiconductor layer, the source electrode, and the drain electrode; forming a first opening in the oxide insulating layer, the opening overlaps with the second oxide semiconductor layer and the second electrode; and forming a pixel electrode from the second oxide semiconductor layer; wherein the step of forming the pixel electrode comprises a step of; forming a second insulating layer containing hydrogen over and in contact with the second oxide semiconductor layer in the first opening so that the hydrogen is supplied to the second oxide semiconductor layer, whereby resistivity of the second oxide semiconductor layer is lowered, wherein the first oxide semiconductor layer serves as a channel formation region, wherein the second electrode, a portion of the first insulating layer, and a portion of the pixel electrode form a capacitor, and wherein the oxide semiconductor layer contains indium, zinc, and a metal element. - View Dependent Claims (18, 19, 20)
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Specification