MAGNESIUM ALUMINATE-BASED SINTERED BODY AND SEMICONDUCTOR MANUFACTURING APPARATUS MEMBER

• US 20140338834A1
• Filed: 08/30/2012
• Published: 11/20/2014
• Est. Priority Date: 09/14/2011
• Status: Abandoned Application

• Current Assignee: Kyocera Corporation
• Original Assignee: Kyocera Corporation
• Inventors: Tanaka, Yasuhiro
• Application Number:
  US14/344,254
• Publication Number:
  US 20140338834A1
• Time in Patent Office: Days
• US Class Current: 156/345.1
• CPC Class Codes: C04B 2235/3201 Alkali metal oxides or oxide-forming salts thereof
• CPC Class Codes: C04B 2235/3208 Calcium oxide or oxide-forming salts thereof, e.g. lime
• CPC Class Codes: C04B 2235/3222 Aluminates other than alumino-silicates, e.g. spinel (MgAl2O4)
• CPC Class Codes: C04B 2235/3239 Vanadium oxides, vanadates or oxide forming salts thereof, e.g. magnesium vanadate
• CPC Class Codes: C04B 2235/3241 Chromium oxides, chromates, or oxide-forming salts thereof
• CPC Class Codes: C04B 2235/3262 Manganese oxides, manganates, rhenium oxides or oxide-forming salts thereof, e.g. MnO
• CPC Class Codes: C04B 2235/3272 Iron oxides or oxide forming salts thereof, e.g. hematite, magnetite
• CPC Class Codes: C04B 2235/3275 Cobalt oxides, cobaltates or cobaltites or oxide forming salts thereof, e.g. bismuth cobaltate, zinc cobaltite
• CPC Class Codes: C04B 2235/3279 Nickel oxides, nickalates, or oxide-forming salts thereof
• CPC Class Codes: C04B 2235/3281 Copper oxides, cuprates or oxide-forming salts thereof, e.g. CuO or Cu2O
• CPC Class Codes: C04B 2235/3284 Zinc oxides, zincates, cadmium oxides, cadmiates, mercury oxides, mercurates or oxide forming salts thereof
• CPC Class Codes: C04B 2235/3418 Silicon oxide, silicic acids, or oxide forming salts thereof, e.g. silica sol, fused silica, silica fume, cristobalite, quartz or flint glass constituents C04B2235/36
• CPC Class Codes: C04B 2235/5445 submicron sized, i.e. from 0,1 to 1 micron
• CPC Class Codes: C04B 2235/6581 Total pressure below 1 atmosphere, e.g. vacuum
• CPC Class Codes: C04B 2235/727 Phosphorus or phosphorus compound content
• CPC Class Codes: C04B 2235/77 Density
• CPC Class Codes: C04B 2235/80 Phases present in the sintered or melt-cast ceramic products other than the main phase
• CPC Class Codes: C04B 2235/96 Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
• CPC Class Codes: C04B 2235/9692 Acid, alkali or halogen resistance
• CPC Class Codes: C04B 35/443 Magnesium aluminate spinel
• CPC Class Codes: C04B 35/6455 : Hot isostatic pressing
• CPC Class Codes: H01L 21/67069 : for drying etching

Abstract

A magnesium aluminate-based sintered body and a member for a semiconductor manufacturing apparatus. The magnesium aluminate-based sintered body contains magnesium aluminate as a main crystal phase. The magnesium aluminate-based sintered body also contains Zn and K such that a sum of zinc content in terms of ZnO and potassium content in terms of K₂O is in a range of 30 ppm to 500 ppm relative to the total mass of oxides calculated from the contents of all constituents. The member for a semiconductor manufacturing apparatus includes the magnesium aluminate-based sintered body.

Claims

1. A magnesium aluminate-based sintered body, containing:

magnesium aluminate as a main crystal phase comprising magnesium aluminate crystals; and

Zn and K, wherein a sum of Zn content in terms of ZnO and K content in terms of K₂O is in a range of 30 ppm to 500 ppm relative to a total mass of oxides calculated from contents of all constituents.

2. The magnesium aluminate-based sintered body according to claim 1, further containing Si, Ca, and P, wherein a sum of the Si content in terms of SiO₂, Ca content in terms of CaO and P content in terms of P₂O₅ is in a range of 500 ppm to 2500 ppm relative to the total mass of oxides calculated from the content of all constituents.

3. The magnesium aluminate-based sintered body according to claim 1, further containing a 3d transition metal oxide, wherein 3d transition metal oxide content in a surface portion thereof is lower than 3d transition metal oxide content in the interior portion thereof.

4. The magnesium aluminate-based sintered body according to claim 3, wherein the 3d transition metal oxide content in the surface portion is ¼

or less of the 3d transition metal oxide content in the interior portion.

5. The magnesium aluminate-based sintered body according to claim 1, further containing MgNiO₂ crystals.

6. The magnesium aluminate-based sintered body according to claim 5, wherein an X-ray diffraction peak intensity ratio (I₂/I₁) is in range between 0.001 and 0.2 with the X-ray diffraction peak intensity I₂ of the MgNiO₂ crystals measured at 2θ

=being between 42.5° and

43.5° and

the X-ray diffraction peak intensity I₁ of the magnesium aluminate measured at 2θ

=being between 36.8° and

36.9°

.

7. The magnesium aluminate-based sintered body according to claim 1, containing aluminum oxide crystals.

8. The magnesium aluminate-based sintered body according to claim 7, wherein an average grain size of the aluminum oxide crystals is larger than an average grain size of the magnesium aluminate crystals.

9. An apparatus member for a semiconductor manufacturing apparatus, the apparatus member comprising the magnesium aluminate-based sintered body according to claim 1,

wherein the semiconductor manufacturing apparatus comprises:

a container; and

a supporting member inside the container, wherein at least a part of the container and the supporting member comprises the apparatus member.