SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

• US 20140339566A1
• Filed: 12/13/2012
• Published: 11/20/2014
• Est. Priority Date: 12/14/2011
• Status: Abandoned Application

• Current Assignee: Seoul Viosys Co., Ltd. (Seoul Semiconductor Co., Ltd.)
• Original Assignee: Seoul Viosys Co., Ltd. (Seoul Semiconductor Co., Ltd.)
• Inventors: Seo, Won Cheol, Cho, Dae Sung, Lee, Chung Hoon, Nam, Ki Bum
• Application Number:
  US14/364,281
• Publication Number:
  US 20140339566A1
• Time in Patent Office: Days
• US Class Current: 257/76
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/0075 comprising nitride compounds
• CPC Class Codes: H01L 33/025 Physical imperfections, e.g. particular concentration or distribution of impurities
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/42 Transparent materials

Abstract

Disclosed are a semiconductor device and a method of fabricating the same. The method includes forming a first GaN layer, a sacrificial layer and a second GaN layer on a GaN substrate, wherein the sacrificial layer has a bandgap narrower than those of the GaN layers; forming a groove penetrating the second GaN layer and the sacrificial layer; growing GaN-based semiconductor layers on the second GaN layer to form a semiconductor stack; forming a support substrate on the semiconductor stack; and removing the GaN substrate from the semiconductor stack by etching the sacrificial layer. Accordingly, since the sacrificial layer is etched using the groove, the support substrate can be separated from the semiconductor stack without damaging the support substrate.

Claims

1. A light emitting diode (LED), comprising:

a substrate;

a semiconductor stack disposed on the substrate and comprising a gallium nitride (GaN)-based p-type semiconductor layer, a GaN-based active layer, and a GaN-based n-type semiconductor layer;

a p-electrode layer in ohmic contact with the p-type semiconductor layer and disposed between the substrate and the semiconductor stack; and

a transparent oxide layer disposed on the semiconductor stack and comprising a first surface comprising a concavo-convex pattern,

wherein the semiconductor stack has a dislocation density of 5×

10⁶/cm² or less.

3. The LED of claim 1, further comprising an n-electrode pad disposed on the first surface of the transparent oxide layer and electrically connected to the n-type semiconductor layer.

4. The LED of claim 1, further comprising:

an n-electrode layer disposed between the substrate and the semiconductor stack and connected to the n-type semiconductor layer through a through-hole penetrating the p-type semiconductor layer and the active layer; and

an insulation layer insulating the p-electrode layer and the n-electrode layer from each other.

5. The LED of claim 4, further comprising a p-electrode pad disposed on the p-electrode layer.

2. (canceled)

6. An LED, comprising:

a substrate;

a semiconductor stack disposed on the substrate and comprising a GaN-based p-type semiconductor layer, a GaN-based active layer, and a GaN-based n-type semiconductor layer;

a p-electrode layer in ohmic contact with the p-type semiconductor layer and disposed between the substrate and the semiconductor stack;

an n-electrode layer disposed between the substrate and the semiconductor stack and connected to the n-type semiconductor layer through a through-hole penetrating the p-type semiconductor layer and the active layer; and

an insulation layer insulating the p-electrode layer and the n-electrode layer from each other,

wherein the semiconductor stack has a dislocation density of 5×

10⁶/cm² or less.

7. The LED of claim 6, further comprising a bonding pad,

wherein the substrate is disposed between the bonding pad and the semiconductor stack.

8. The LED of claim 6, further comprising a p-electrode pad disposed on the p-electrode layer.

9. The LED of claim 6, wherein the insulation layer insulates the n-electrode layer from the p-type semiconductor layer and the active layer within the through-hole.

10. The LED of claim 9, further comprising a transparent oxide layer disposed on the semiconductor stack and comprising a first surface comprising a concavo-convex pattern.

11. A method of fabricating an LED, the method comprising:

forming a first GaN layer, a sacrificial layer, and a second GaN layer on a GaN substrate, the sacrificial layer having a bandgap narrower than bandgaps of the GaN layers;

forming a groove penetrating the second GaN layer and the sacrificial layer;

growing GaN-based semiconductor layers on the second GaN layer to form a semiconductor stack;

forming a substrate on the semiconductor stack; and

etching the sacrificial layer to remove the GaN substrate from the semiconductor stack.

12. The method of claim 11, wherein the sacrificial layer comprises InGaN.

13. The method of claim 11, wherein the etching of the sacrificial layer comprises using a photo-enhanced chemical etching technique.

14. The method of claim 13, wherein the etching of the sacrificial layer comprises irradiating the sacrificial layer with light through the GaN substrate in a KOH or NaOH solution.

15. The method of claim 11, further comprising forming a transparent oxide layer on the n-type semiconductor layer, after removing the GaN substrate,

wherein the transparent oxide layer comprises a first layer comprising a concavo-convex pattern.

16. The method of claim 11, further comprising forming a p-electrode layer in ohmic contact with the semiconductor stack, before forming the substrate,

wherein:

the semiconductor stack comprises a GaN-based n-type semiconductor layer, a GaN-based active layer, and a GaN-based p-type semiconductor layer; and

the p-electrode layer is in ohmic contact with the p-type semiconductor layer.

17. The method of claim 16, further comprising, before forming the support substrate:

forming a through-hole penetrating the p-type semiconductor layer and the active layer;

forming an insulation layer covering an inner wall of the through-hole and the p-electrode layer; and

forming an n-electrode layer electrically connected to the n-type semiconductor layer, through the through-hole.

18. The method of claim 17, further comprising, after removing the GaN substrate:

removing a portion of the semiconductor stack, to expose the p-electrode layer; and

forming a p-electrode pad on the p-electrode layer.

19. The method of claim 11, wherein the groove comprises a mesh-shaped or stripe-shaped grooves.

20. The method of claim 11, further comprising:

forming a bonding pad on an opposite side of the substrate from the semiconductor stack.

21. A method of fabricating an LED, the method comprising:

forming a GaN layer and a sacrificial layer on a GaN substrate, the sacrificial layer comprising a GaN-based semiconductor having a bandgap narrower than the bandgap of the GaN layer;

growing GaN-based semiconductor layers on the sacrificial layer to form a semiconductor stack;

forming a groove penetrating the semiconductor stack and the sacrificial layer;

forming a substrate on the semiconductor stack; and

etching the sacrificial layer to separate the GaN substrate from the semiconductor stack.

22. (canceled)