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THIN-FILM TRANSISTOR, DISPLAY UNIT, AND ELECTRONIC APPARATUS

  • US 20140346499A1
  • Filed: 05/09/2014
  • Published: 11/27/2014
  • Est. Priority Date: 05/24/2013
  • Status: Active Grant
First Claim
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1. A thin-film transistor comprising:

  • a substrate;

    a first barrier film formed on the substrate;

    a second barrier film formed in a selective region on the first barrier film, and having a barrier property against hydrogen;

    an oxide semiconductor layer including a first part formed on the second barrier film and a second part formed on the first barrier film, the first part functioning as an active layer, and the second part having lower electrical resistance than the first part;

    a gate electrode formed on the first part of the oxide semiconductor layer with a gate insulating film therebetween; and

    a source electrode or drain electrode electrically connected to the second part of the oxide semiconductor layer,the first barrier film having a barrier property against an impurity from the substrate and a property of chemically reducing the oxide semiconductor layer.

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