THIN-FILM TRANSISTOR, DISPLAY UNIT, AND ELECTRONIC APPARATUS
First Claim
1. A thin-film transistor comprising:
- a substrate;
a first barrier film formed on the substrate;
a second barrier film formed in a selective region on the first barrier film, and having a barrier property against hydrogen;
an oxide semiconductor layer including a first part formed on the second barrier film and a second part formed on the first barrier film, the first part functioning as an active layer, and the second part having lower electrical resistance than the first part;
a gate electrode formed on the first part of the oxide semiconductor layer with a gate insulating film therebetween; and
a source electrode or drain electrode electrically connected to the second part of the oxide semiconductor layer,the first barrier film having a barrier property against an impurity from the substrate and a property of chemically reducing the oxide semiconductor layer.
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Accused Products
Abstract
Provided is a thin-film transistor that includes: a substrate; a first barrier film formed on the substrate; a second barrier film formed in a selective region on the first barrier film, and having a barrier property against hydrogen; an oxide semiconductor layer including a first part formed on the second barrier film and a second part formed on the first barrier film, in which the first part functions as an active layer, and the second part has lower electrical resistance than the first part; a gate electrode formed on the first part of the oxide semiconductor layer with a gate insulating film therebetween; and a source electrode or drain electrode electrically connected to the second part of the oxide semiconductor layer. The first barrier film has a barrier property against an impurity from the substrate and a property of chemically reducing the oxide semiconductor layer.
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Citations
10 Claims
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1. A thin-film transistor comprising:
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a substrate; a first barrier film formed on the substrate; a second barrier film formed in a selective region on the first barrier film, and having a barrier property against hydrogen; an oxide semiconductor layer including a first part formed on the second barrier film and a second part formed on the first barrier film, the first part functioning as an active layer, and the second part having lower electrical resistance than the first part; a gate electrode formed on the first part of the oxide semiconductor layer with a gate insulating film therebetween; and a source electrode or drain electrode electrically connected to the second part of the oxide semiconductor layer, the first barrier film having a barrier property against an impurity from the substrate and a property of chemically reducing the oxide semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A display unit provided with a plurality of pixels, each of the pixels being provided with a thin-film transistor, each of the thin-film transistors comprising:
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a substrate; a first barrier film formed on the substrate; a second barrier film formed in a selective region on the first barrier film, and having a barrier property against hydrogen; an oxide semiconductor layer including a first part formed on the second barrier film and a second part formed on the first barrier film, the first part functioning as an active layer, and the second part having lower electrical resistance than the first part; a gate electrode formed on the first part of the oxide semiconductor layer with a gate insulating film therebetween; and a source electrode or drain electrode electrically connected to the second part of the oxide semiconductor layer, the first barrier film having a barrier property against an impurity from the substrate and a property of chemically reducing the oxide semiconductor layer. - View Dependent Claims (9)
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10. An electronic apparatus provided with a display unit, the display unit being provided with a plurality of pixels, each of the pixels being provided with a thin-film transistor, each of the thin-film transistors comprising:
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a substrate; a first barrier film formed on the substrate; a second barrier film formed in a selective region on the first barrier film, and having a barrier property against hydrogen; an oxide semiconductor layer including a first part formed on the second barrier film and a second part formed on the first barrier film, the first part functioning as an active layer, and the second part having lower electrical resistance than the first part; a gate electrode formed on the first part of the oxide semiconductor layer with a gate insulating film therebetween; and a source electrode or drain electrode electrically connected to the second part of the oxide semiconductor layer, the first barrier film having a barrier property against an impurity from the substrate and a property of chemically reducing the oxide semiconductor layer.
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Specification