OPTICAL INPUT/OUTPUT DEVICE, OPTICAL ELECTRONIC SYSTEM INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE SAME

• US 20140346532A1
• Filed: 10/24/2013
• Published: 11/27/2014
• Est. Priority Date: 05/23/2013
• Status: Active Grant

• Current Assignee: Electronics and Telecommunications Research Institute
• Original Assignee: Electronics and Telecommunications Research Institute
• Inventors: KIM, Gyungock, PARK, Hyundai, KIM, In Gyoo, KIM, Sang Hoon, JANG, Ki Seok, KIM, Sang Gi, CHOI, Yongseok, PARK, Jaegyu, KIM, Sun Ae, JOO, Jiho, KWON, Hyuk Je, OH, Jin Hyuk, KWACK, Myung Joon
• Granted Patent: US 9,690,042 B2
• Time in Patent Office: Days
• US Class Current: 257/84
• CPC Class Codes: G02B 6/12004 Combinations of two or more optical elements
• CPC Class Codes: G02B 6/13 Integrated optical circuits characterised by the manufacturing method
• CPC Class Codes: G02B 6/4206 Optical features G02B6/4207, G02B6/421 take precedence
• CPC Class Codes: G02B 6/4214 the intermediate optical element having redirecting reflective means, e.g. mirrors, prisms for deflecting the radiation from horizontal to down- or upward direction toward a device G02B6/4246 takes precedence
• CPC Class Codes: H01L 21/762 Dielectric regions , e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
• CPC Class Codes: H01L 27/15 including semiconductor components having potential barriers, specially adapted for light emission
• CPC Class Codes: H01L 31/167 the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers

Abstract

Disclosed are an optical input/output device and an opto-electronic system including the same. The device includes a bulk silicon substrate, at least one vertical-input light detection element monolithically integrated on a portion of the bulk silicon substrate, and at least one vertical-output light source element monolithically integrated on another portion of the bulk silicon substrate adjacent to the vertical-input light detection element. The vertical-output light source element includes a III-V compound semiconductor light source active layer combined with the bulk silicon substrate by a wafer bonding method.

Claims

1. An optical input/output device comprising:

a bulk silicon substrate;

at least one vertical-input light detection element monolithically integrated on a portion of the bulk silicon substrate; and

at least one vertical-output light source element monolithically integrated on another portion of the bulk silicon substrate,

wherein the vertical-output light source element includes a III-V compound semiconductor light source active layer monolithically integrated on the bulk silicon substrate by a wafer bonding.

2. The optical input/output device of claim 1, wherein the vertical-input light detection element includes germanium.

3. The optical input/output device of claim 1, wherein the vertical-input light detection element comprises:

a photodiode including Ge_1-xSi_x/Ge_1-ySi_y superlattice (0≦

x,y≦

1), germanium-based quantum dots, a germanium-based quantum wire array, or silicon.

4. The optical input/output device of claim 1, wherein the vertical-output light source element includes a surface emitting laser or a surface emitting light emitting diode (LED).

5. The optical input/output device of claim 1, further comprising:

a passivation layer on the vertical-output light source element and the vertical-input light detection element.

6. The optical input/output device of claim 5, wherein the passivation layer includes silicon oxide.

7. The optical input/output device of claim 5, wherein the passivation layer has holes exposing the vertical-output light source element and the vertical-input light detection element,

the optical input/output device, further comprising:

optical vias formed in the holes, respectively.

8. The optical input/output device of claim 7, wherein the optical vias include silicon nitride.

9. The optical input/output device of claim 8, further comprising:

horizontal optical waveguides provided on the passivation layer and coupled to the optical vias.

10. The optical input/output device of claim 9, further comprising:

a passive optical circuit provided on the passivation layer,

wherein the passive optical circuit includes optical multiplexer/demultiplexer (MUX/DEMUX), an optical switch, or a grating coupler; and

wherein the passive optical circuit is coupled to the horizontal optical waveguide.

11. The optical input/output device of claim 1, further comprising:

a complementary metal-oxide semiconductor (CMOS) interface circuitry electrically connected to the vertical-input light detection element or the vertical-output light source element,

wherein the CMOS interface circuitry is monolithically integrated on the bulk silicon substrate.

12. The optical input/output device of claim 11, wherein the CMOS interface circuitry includes a trans-impedance amplifier (TIA), a light source driver, a limiting amplifier (LA), a serialize/deserialize circuit, a PLL circuit, a clock-data-recovery (CDR) circuit, or a protocol integrated circuit.

13. An opto-electronic system comprising:

a plurality of signal processing chips, each of the signal processing chips comprising;

a bulk silicon substrate;

a signal processing device integrated on the bulk silicon substrate; and

a vertical-input light detection element array and a vertical-output light source element array that are connected to the signal processing device and are monolithically integrated on the bulk silicon substrate,

wherein the plurality of signal processing chips are three-dimensionally stacked; and

wherein the vertical-input light detection element arrays and the vertical-output light source element arrays of the signal processing chips face each other in one-to-one correspondence such that the plurality of signal processing chips are three-dimensionally optically coupled to each other.

14. The opto-electronic system of claim 13, wherein the vertical-output light source element array includes a III-V compound semiconductor light source active layer bonded to the bulk silicon substrate by a wafer bonding method.

15. The opto-electronic system of claim 13, wherein the signal processing device includes a central processing unit (CPU), a memory circuit, a data bus interface circuit, a peripheral control device, an user definition application-specific integrated circuit (ASIC), or an optical communication circuit.

16. An optical input/output device comprising:

a bulk silicon substrate;

at least one vertical-input light detection element monolithically integrated on a portion of the bulk silicon substrate;

a III-V compound semiconductor substrate mounted on another portion of the bulk silicon substrate by a die-bonding; and

at least one vertical-output light source element on the III-V compound semiconductor substrate.

17. The optical input/output device of claim 16, wherein the vertical-output light source element includes a III-V compound semiconductor light source active layer.

18. A method of manufacturing an optical input/output device, the method comprising:

providing a bulk silicon substrate;

monolithically integrating a vertical-input light detection element on a portion of the bulk silicon substrate; and

monolithically integrating a vertical-output light source element on another portion of the bulk silicon substrate,

wherein monolithically integrating the vertical-output light source element comprises;

forming an element passivation layer covering the vertical-input light detection element on the portion of the bulk silicon substrate;

bonding a wafer including a III-V compound semiconductor substrate and a III-V compound semiconductor light source active layer on the III-V compound semiconductor substrate to the another portion of the bulk silicon substrate;

removing the III-V compound semiconductor substrate;

patterning the III-V compound semiconductor light source active layer to form the vertical-output light source element; and

forming a passivation layer on the vertical-input light detection element and the vertical-output light source element.

19. The method of claim 18, further comprising:

etching the passivation layer to form holes exposing the vertical-input light detection element and the vertical-output light source element;

forming optical vias in the holes, respectively;

bonding horizontal optical waveguides onto the passivation layer, the horizontal optical waveguides coupled to the optical vias; and

forming a passive optical circuit on the passivation layer, the passive optical circuit coupled to the horizontal optical waveguide, and the passive optical circuit including optical multiplexer/demultiplexer (MUX/DEMUX), an optical switch, or a grating coupler.