Semiconductor Device with Charge Compensation
First Claim
1. A semiconductor device, comprising a semiconductor body having a first surface defining a vertical direction, and a source metallization arranged on the first surface, wherein in a vertical cross-section the semiconductor body comprises:
- a drift region of a first conductivity type;
at least two field plates each of which is disposed in the drift region, separated from the drift region by a field dielectric layer and in ohmic contact with the source metallization;
a drain region of the first conductivity type having a maximum doping concentration higher than a maximum doping concentration of the drift region; and
a third semiconductor layer of the first conductivity type arranged between the drift region and the drain region and comprising at least one of a floating field plate and a floating semiconductor region of the second conductivity type forming a pn-junction with the third semiconductor layer.
1 Assignment
0 Petitions
Accused Products
Abstract
A semiconductor device includes a semiconductor body and a source metallization arranged on a first surface of the body. The body includes: a first semiconductor layer including a compensation-structure; a second semiconductor layer adjoining the first layer, comprised of semiconductor material of a first conductivity type and having a doping charge per horizontal area lower than a breakdown charge per area of the semiconductor material; a third semiconductor layer of the first conductivity type adjoining the second layer and comprising at least one of a self-charging charge trap, a floating field plate and a semiconductor region of a second conductivity type forming a pn-junction with the third layer; and a fourth semiconductor layer of the first conductivity type adjoining the third layer and having a maximum doping concentration higher than that of the third layer. The first semiconductor layer is arranged between the first surface and the second semiconductor layer.
-
Citations
16 Claims
-
1. A semiconductor device, comprising a semiconductor body having a first surface defining a vertical direction, and a source metallization arranged on the first surface, wherein in a vertical cross-section the semiconductor body comprises:
-
a drift region of a first conductivity type; at least two field plates each of which is disposed in the drift region, separated from the drift region by a field dielectric layer and in ohmic contact with the source metallization; a drain region of the first conductivity type having a maximum doping concentration higher than a maximum doping concentration of the drift region; and a third semiconductor layer of the first conductivity type arranged between the drift region and the drain region and comprising at least one of a floating field plate and a floating semiconductor region of the second conductivity type forming a pn-junction with the third semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
-
-
10. A semiconductor device, comprising a semiconductor body comprising:
-
a first surface defining a vertical direction; a first semiconductor layer comprising a compensation structure; a second semiconductor layer adjoining the first semiconductor layer, being comprised of a semiconductor material of a first conductivity type, and having a doping charge per horizontal area lower than a breakdown charge per area of the semiconductor material, the first semiconductor layer being arranged between the first surface and the second semiconductor layer; a third semiconductor layer of the first conductivity type adjoining the second semiconductor layer and comprising at least one of a self-charging charge trap, a floating field plate and a semiconductor region of a second conductivity type forming a pn-junction with the third semiconductor layer; and a fourth semiconductor layer of the first conductivity type adjoining the third semiconductor layer and having a maximum doping concentration which is higher than a maximum doping concentration of the third semiconductor layer. - View Dependent Claims (11, 12, 13, 14, 15)
-
-
16. A method for producing a semiconductor device, the method comprising:
-
providing a semiconductor body of a first conductivity type comprising a top surface defining a vertical direction, and a backside surface arranged opposite the top surface; forming in the semiconductor body from the top surface at least one of a floating trench field plate which is partly separated from the semiconductor body by a dielectric region and a floating semiconductor region of a second conductivity type forming a pn-junction within the semiconductor body; epitaxial depositing at least two semiconductor layers of the first conductivity type on the top surface; forming in an upper semiconductor layer of the at least two semiconductor layers a compensation-structure; and forming a first metallization above the at least two semiconductor layers and in ohmic contact with the compensation-structure.
-
Specification