SYSTEMS AND METHODS FOR THIN-FILM DEPOSITION OF METAL OXIDES USING EXCITED NITROGEN-OXYGEN SPECIES

• US 20140346650A1
• Filed: 08/11/2014
• Published: 11/27/2014
• Est. Priority Date: 08/14/2009
• Status: Active Grant

• Current Assignee: ASM IP Holding B.V. (ASM International NV)
• Original Assignee: ASM IP Holding B.V. (ASM International NV)
• Inventors: Mohith, Verghese, Raisanen, Petri, Sung-hoon, Jung
• Granted Patent: US 10,804,098 B2
• Time in Patent Office: Days
• US Class Current: 257/635
• CPC Class Codes: C01B 13/11 by electric discharge
• CPC Class Codes: C01B 2201/64 Oxygen
• CPC Class Codes: C23C 16/40 Oxides
• CPC Class Codes: C23C 16/45527 characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
• CPC Class Codes: C23C 16/45553 characterized by the use of precursors specially adapted for ALD
• CPC Class Codes: C23C 16/52 Controlling or regulating the coating process C23C16/45557, C23C16/279 take precedence
• CPC Class Codes: H01L 21/02172 the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides materials containing silicon H01L21/02123; metal silicates H01L21/02142
• CPC Class Codes: H01L 21/02205 the layer being characterised by the precursor material for deposition
• CPC Class Codes: H01L 21/0228 deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
• CPC Class Codes: H01L 29/517 the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate H01L29/518 takes precedence

Abstract

The present invention relates to a process and system for depositing a thin film onto a substrate. One aspect of the invention is depositing a thin film metal oxide layer using atomic layer deposition (ALD).

Claims

1. (canceled)

2. A semiconductor comprising:

a substrate;

a dielectric layer; and

an inter oxide layer between said dielectric layer and substrate formed by exposing said substrate to a gas comprising ozone generated from a mixture of O₂ and N₂ having a N₂/O₂ ratio greater than 0.001 and a nitrogen-containing species gas.

3. The semiconductor of claim 2, wherein the dielectric layer is formed using atomic layer deposition.

4. The semiconductor of claim 2, wherein the inter oxide layer comprises oxygen and one or more elements selected from the group consisting of lanthanum, hafnium, silicon, tantalum, titanium, aluminum, and zirconium.

5. The semiconductor of claim 2, wherein the inter oxide layer is formed at a temperature between about 130°

C. to 300°

C.

6. The semiconductor of claim 2, wherein the inter oxide layer is formed by exposing the substrate to an oxidizer comprising an oxidant gas and a nitrogen containing gas.

7. A system comprising:

a reaction chamber;

a precursor reactant source coupled to the reactor chamber;

an oxidizer gas source coupled to the reactor chamber;

a nitrogen-containing species source coupled to the reactor chamber; and

a system operation and control mechanism configured to cause the system to apply an atomic layer deposition cycle to a substrate, the cycle comprising;

exposing the substrate to a precursor gas for a precursor pulse interval then removing the precursor; and

exposing the substrate to an oxidizer comprising ozone generated from a mixture of O₂ and N₂ having a N₂/O₂ ratio greater than 0.001 and a nitrogen-containing species gas for an oxidation pulse interval.

8. A method for forming a device, the method comprising the steps of:

providing a substrate;

forming activated N_xO_y species;

introducing the activated N_xO_y species to a reaction chamber;

forming an oxide layer by exposing the substrate to an oxidizer gas comprising an oxidant gas and the activated N_xO_y species for an oxidation pulse interval; and

prior to introducing the activated N_xO_y species to the reaction chamber, monitoring the activated N_xO_y species.

9. The method for forming a device of claim 8, further comprising a step of adjusting one or more process parameters based on the monitoring.

10. The method for forming a device of claim 8, further comprising a step of controlling the formation of the N_xO_y species.

11. The method for forming a device of claim 10, wherein the step of controlling comprises closed-loop control.

12. The method for forming a device of claim 8, wherein the oxidant gas comprises ozone.

13. The method for forming a device of claim 8, further comprising a step of providing a precursor gas for a precursor pulse interval then removing the precursor gas.

14. The method for forming a device of claim 8, wherein the oxidant gas comprises nitrogen.

15. A method for forming a device, the method comprising the steps of:

providing a substrate;

forming activated nitrogen species;

introducing the activated nitrogen species to a reaction chamber;

forming an oxide layer by exposing the substrate to an oxidizer gas comprising an oxidant gas and the activated nitrogen species for an oxidation pulse interval; and

prior to introducing the activated nitrogen species to the reaction chamber, monitoring the activated nitrogen species.

16. The method for forming a device of claim 15, further comprising a step of adjusting one or more process parameters based on the monitoring.

17. The method for forming a device of claim 15, further comprising a step of controlling the formation of the activated nitrogen species.

18. The method for forming a device of claim 17, wherein the step of controlling comprises closed-loop control.

19. The method for forming a device of claim 15, wherein the activated nitrogen species comprises oxygen.

20. The method for forming a device of claim 15, further comprising a step of cleaning the substrate.

21. The method for forming a device of claim 15, comprising a step of forming an inter oxide layer.