SYSTEMS AND METHODS FOR THIN-FILM DEPOSITION OF METAL OXIDES USING EXCITED NITROGEN-OXYGEN SPECIES
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Abstract
The present invention relates to a process and system for depositing a thin film onto a substrate. One aspect of the invention is depositing a thin film metal oxide layer using atomic layer deposition (ALD).
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Citations
21 Claims
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1. (canceled)
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2. A semiconductor comprising:
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a substrate; a dielectric layer; and an inter oxide layer between said dielectric layer and substrate formed by exposing said substrate to a gas comprising ozone generated from a mixture of O2 and N2 having a N2/O2 ratio greater than 0.001 and a nitrogen-containing species gas. - View Dependent Claims (3, 4, 5, 6)
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7. A system comprising:
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a reaction chamber; a precursor reactant source coupled to the reactor chamber; an oxidizer gas source coupled to the reactor chamber; a nitrogen-containing species source coupled to the reactor chamber; and a system operation and control mechanism configured to cause the system to apply an atomic layer deposition cycle to a substrate, the cycle comprising; exposing the substrate to a precursor gas for a precursor pulse interval then removing the precursor; and exposing the substrate to an oxidizer comprising ozone generated from a mixture of O2 and N2 having a N2/O2 ratio greater than 0.001 and a nitrogen-containing species gas for an oxidation pulse interval.
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8. A method for forming a device, the method comprising the steps of:
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providing a substrate; forming activated NxOy species; introducing the activated NxOy species to a reaction chamber; forming an oxide layer by exposing the substrate to an oxidizer gas comprising an oxidant gas and the activated NxOy species for an oxidation pulse interval; and prior to introducing the activated NxOy species to the reaction chamber, monitoring the activated NxOy species. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. A method for forming a device, the method comprising the steps of:
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providing a substrate; forming activated nitrogen species; introducing the activated nitrogen species to a reaction chamber; forming an oxide layer by exposing the substrate to an oxidizer gas comprising an oxidant gas and the activated nitrogen species for an oxidation pulse interval; and prior to introducing the activated nitrogen species to the reaction chamber, monitoring the activated nitrogen species. - View Dependent Claims (16, 17, 18, 19, 20, 21)
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Specification