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SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND HIGH-FREQUENCY POWER AMPLIFIER MODULE

  • US 20140347130A1
  • Filed: 12/05/2012
  • Published: 11/27/2014
  • Est. Priority Date: 12/20/2011
  • Status: Active Grant
First Claim
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1. A semiconductor integrated circuit device comprising:

  • a reference-voltage generating circuit configured to generate a first reference voltage;

    a reference-voltage correction circuit supplied with the first reference voltage and configured to generate a second reference voltage obtained by correcting the first reference voltage; and

    a regulator circuit including a first amplifier circuit of a negative feedback configuration and a feedback resistor, and configured to generate a predetermined output voltage according to the second reference voltage and a resistance value of the feedback resistor, whereinthe reference-voltage correction circuit includes;

    a buffer circuit supplied with the first reference voltage, and configured to output a first voltage with a potential approximately equal to that of the first reference voltage and perform impedance conversion between an input and an output;

    a first resistor configured to generate a first current having a current value according to a voltage value of the first voltage;

    a first node supplied with a second current having a current value proportional to the current value of the first current; and

    first, second, and third resistance paths selectively coupled between the first node and a first power supply voltage and having mutually different resistance values, andthe second reference voltage is generated in the first node on the basis of a resistance value associated with any one resistance path selected from among the first, second, and third resistance paths and the current value of the second current.

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