NOR-BASED BCAM/TCAM CELL AND ARRAY WITH NAND SCALABILITY
First Claim
1. A 2T-string NOR-based CAM logic cell circuit with NAND scalability, the 2T-string NOR-based CAM logic cell comprising:
- a first NAND flash transistor connected a second NAND flash transistor in series, the first NAND flash transistor including a first gate coupled to a first word line and a drain node coupled to a vertical bit line, the second NAND flash transistor including a second gate coupled to a second word line and a source node coupled to a vertical source line, each of the first NAND flash transistor and the second NAND flash transistor being associated with at least a first threshold voltage level Vt0 of a negative value corresponding to a first physical state or a second threshold voltage level Vt1 of a positive value but smaller than power voltage level VDD corresponding to a second physical state;
wherein the first NAND flash transistor and the second NAND flash transistor respectively corresponding to the first physical state and the second physical state define a first CAM logic state “
0” and
the first NAND flash transistor and the second NAND flash transistor being respectively associated with the second physical state and the first physical state define a second CAM logic state “
1”
, the first word line and the second word line are respectively at either ground voltage VSS=0V level or the complementary VDD level for performing a compare operation to determine if a single logic-bit match is found at either one of the first CAM logic state “
0”
or the second CAM logic state “
1”
when one of the first NAND flash transistor and the second NAND flash transistor is in non-conduction state.
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Abstract
This invention discloses a 2T-string NOR-based CAM logic cell comprising two physical NAND cells connected in series with two horizontal WLs and one vertical BL and one vertical SL. Additionally, a sector of NOR-based CAM logic cell array is configured with N vertical cell strings each including M 2T-string NOR-based CAM logic cells connected in parallel sharing a local vertical SL and one dedicated vertical ML as an Operand word vertical page. Each 2T-string NOR-based CAM logic cell can be either a binary or ternary CAM cell associated with two or three physical states assigned to NAND cells'"'"' Vt levels for defining CAM logic states. Logic match of M-logic-bit inputs is found for at least one vertical page if the corresponding M 2T-string NOR-based CAM logic cells are in non-conduction state, providing M times faster Compare performance over the NAND-based CAM and 2 time faster than SRAM-based CAM.
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Citations
31 Claims
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1. A 2T-string NOR-based CAM logic cell circuit with NAND scalability, the 2T-string NOR-based CAM logic cell comprising:
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a first NAND flash transistor connected a second NAND flash transistor in series, the first NAND flash transistor including a first gate coupled to a first word line and a drain node coupled to a vertical bit line, the second NAND flash transistor including a second gate coupled to a second word line and a source node coupled to a vertical source line, each of the first NAND flash transistor and the second NAND flash transistor being associated with at least a first threshold voltage level Vt0 of a negative value corresponding to a first physical state or a second threshold voltage level Vt1 of a positive value but smaller than power voltage level VDD corresponding to a second physical state; wherein the first NAND flash transistor and the second NAND flash transistor respectively corresponding to the first physical state and the second physical state define a first CAM logic state “
0” and
the first NAND flash transistor and the second NAND flash transistor being respectively associated with the second physical state and the first physical state define a second CAM logic state “
1”
, the first word line and the second word line are respectively at either ground voltage VSS=0V level or the complementary VDD level for performing a compare operation to determine if a single logic-bit match is found at either one of the first CAM logic state “
0”
or the second CAM logic state “
1”
when one of the first NAND flash transistor and the second NAND flash transistor is in non-conduction state. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A sector of M×
- N 2T-string NOR-based CAM logic cell array comprising;
a M×
N matrix of 2T-string NOR-based CAM logic cells including M paired horizontal word lines coupled through N vertical pages, M and N being properly selected integer numbers, each paired horizontal word lines including a first word line and a second word line, each of the N vertical pages including M 2T-string NOR-based CAM logic cells connected in parallel sharing a vertical local bit line and a vertical local source line, the vertical local source line being accessed by a horizontal global source line via a first select transistor commonly for the N vertical pages and the vertical local bit line being accessed by a vertical global bit line via a second select transistor individually for each of the N vertical page, each of the M 2T-string NOR-based CAM logic cells comprising;a first NAND flash transistor connected a second NAND flash transistor in series, the first NAND flash transistor including a first gate coupled to the first word line and a drain node coupled to the vertical local bit line, the second NAND flash transistor including a second gate coupled to the second word line and a source node coupled to the vertical local source line, each of the first NAND flash transistor and the second NAND flash transistor being associated with at least a first threshold voltage level Vt0 of a negative value corresponding to a first physical state or a second threshold voltage level Vt1 of a positive value corresponding to a second physical state, wherein the first NAND flash transistor and the second NAND flash transistor being respectively associated with the first physical state and the second physical state define a first CAM logic state “
0” and
the first NAND flash transistor and the second NAND flash transistor being respectively associated with the second physical state and the first physical state define a second CAM logic state “
1”
;a search word device configured to generate at least M-bit logic outputs, the M pairs of outputs being respectively coupled to the M paired horizontal word lines, each pair of outputs being either at a ground voltage VSS=0V or at a complementary power voltage VDD level for initiating a compare operation to determine if a single logic-bit match is found for each of the M 2T-string NOR-based CAM logic cells at any one of the first CAM logic state “
0” and
the second CAM logic state “
1”
when one of the first NAND flash transistor and the second NAND flash transistor is in non-conduction state;a priority decoder device configured to receive N vertical global bit lines respectively associated with the N vertical pages as N match lines for sending a match information to a hit line if at least one M-logic-bit match is found for one vertical page with all the M 2T-string NOR-based CAM logic cells respectively at either one of the first CAM logic state “
0”
or the second CAM logic state “
1” and
generating a priority list if multiple matches are found respectively for corresponding multiple vertical pages; anda Comparand address generator device coupled to the N match lines and received the match information from the N match lines and the hit line to generate an address list associated with one or more vertical pages having the at least one M-logic-bit match or one or more partial matches depending on the priority list. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31)
- N 2T-string NOR-based CAM logic cell array comprising;
Specification