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SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME

  • US 20140349413A1
  • Filed: 03/25/2014
  • Published: 11/27/2014
  • Est. Priority Date: 05/22/2013
  • Status: Active Grant
First Claim
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1. A method of manufacturing a semiconductor device, the method comprising:

  • forming a material layer on a substrate;

    performing a selective oxidation process to form a capping oxide layer on a first surface of the material layer, wherein a second surface of the material layer is not oxidized; and

    etching the material layer through the second surface of the material layer to form a material pattern,wherein an etch rate of the capping oxide layer is less than an etch rate of the material layer when the material layer is etched.

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