SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME
First Claim
1. A method of manufacturing a semiconductor device, the method comprising:
- forming a material layer on a substrate;
performing a selective oxidation process to form a capping oxide layer on a first surface of the material layer, wherein a second surface of the material layer is not oxidized; and
etching the material layer through the second surface of the material layer to form a material pattern,wherein an etch rate of the capping oxide layer is less than an etch rate of the material layer when the material layer is etched.
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Abstract
A method of manufacturing a semiconductor device may include forming a material layer on a substrate, performing a selective oxidation process to form a capping oxide layer on a first surface of the material layer, wherein a second surface of the material layer is not oxidized, and etching the material layer through the second surface to form a material pattern. An etch rate of the capping oxide layer is less than an etch rate of the material layer. A semiconductor device may include a lower electrode on a substrate, a data storage part on a top surface of the lower electrode, an upper electrode on the data storage part, and a capping oxide layer arranged on at least a portion of a top surface of the upper electrode. The capping oxide layer may include an oxide formed by oxidation of an upper surface of the upper electrode.
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Citations
21 Claims
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1. A method of manufacturing a semiconductor device, the method comprising:
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forming a material layer on a substrate; performing a selective oxidation process to form a capping oxide layer on a first surface of the material layer, wherein a second surface of the material layer is not oxidized; and etching the material layer through the second surface of the material layer to form a material pattern, wherein an etch rate of the capping oxide layer is less than an etch rate of the material layer when the material layer is etched. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method of manufacturing a semiconductor device, the method comprising:
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forming a lower electrode on a substrate; forming a conductive layer having a first surface covering a top surface of the lower electrode and a second surface covering at least a portion of a sidewall of the lower electrode; performing a selective oxidation process to form a capping oxide layer on a first surface of the conductive layer, wherein a second surface of the conductive layer is not oxidized; and etching the conductive layer through the second surface of the conductive layer to form an upper electrode on the top surface of the lower electrode, wherein an etch rate of the capping oxide layer is less than an etch rate of the conductive layer when the conductive layer is etched. - View Dependent Claims (8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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21-32. -32. (canceled)
Specification