PRESSURE SENSOR

• US 20140352445A1
• Filed: 05/23/2014
• Published: 12/04/2014
• Est. Priority Date: 05/28/2013
• Status: Active Grant

• Current Assignee: Murata Manufacturing Co Limited
• Original Assignee: Murata Manufacturing Co Limited
• Inventors: KUISMA, Heikki
• Granted Patent: US 9,453,775 B2
• Time in Patent Office: Days
• US Class Current: 73/717
• CPC Class Codes: G01L 19/04 Means for compensating for effects of changes of temperature , i.e. other than electric compensation
• CPC Class Codes: G01L 9/0047 Diaphragm with non uniform thickness, e.g. with grooves, bosses or continuously varying thickness
• CPC Class Codes: G01L 9/0072 using variations in capacitance

Abstract

A microelectromechanical pressure sensor structure comprises a planar base, side walls and a diaphragm plate, attached to each other to form a hermetically closed gap that provides a reference pressure. The diaphragm plate extends along a planar inner surface on top of the side walls, and has an outer surface on the opposite side of the diaphragm plate. At least part of the outer surface of the diaphragm plate forms a planar part that includes a recess, a depth of which extends parallel to the side walls and is less than the nominal thickness of the diaphragm. A large part of reasons causing the different bending of the diaphragm and the underlying structures can be eliminated with one or more recesses arranged to the pressure sensor structure.

Claims

1. A microelectromechanical pressure sensor structure that comprises a planar base, side walls and a diaphragm plate, wherein

the side walls extend circumferentially to a first distance away from the planar base;

the diaphragm plate has a planar inner surface that extends on top of the side walls, and an outer surface opposite the inner surface on the diaphragm plate;

the planar base, the side walls and the diaphragm plate are attached to each other;

a top edge of inner surfaces of the side walls forms a periphery of a diaphragm, a nominal thickness of the diaphragm equals to the distance from the inner surface to the outer surface of the diaphragm plate at the periphery of the diaphragm;

the outer surface of the diaphragm plate includes a planar surface part that includes a periphery of a recess, a depth of which extends parallel to the side walls and is less than the nominal thickness of the diaphragm.

2. A microelectromechanical pressure sensor structure of claim 1, wherein the planar base, the side walls and the diaphragm plate form a hermetically closed gap in a reference pressure.

3. A microelectromechanical pressure sensor structure of claim 1, wherein the inner surface and the outer surface are exposed to different pressures.

4. A microelectromechanical pressure sensor structure of claim 1, wherein the periphery of the diaphragm and the periphery of the recess have the same shape.

5. A microelectromechanical pressure sensor structure of claim 1, wherein the diaphragm has a length and a width in the plane of the inner surface, wherein the length is in a direction of the longest extent of the diaphragm, and the width is in a direction perpendicular to the direction of the length in the inner surface;

a width of the recess on a planar surface part of the outer surface extends parallel to the direction of the width of the diaphragm;

the width of the recess is equal to or less than the sum of the width of the diaphragm and two times the thickness of the diaphragm.

6. A microelectromechanical pressure sensor structure of claim 5, wherein the width of the recess is 0.4 to 0.7 times the width of the diaphragm.

7. A rnicroelectrornechanical pressure sensor structure of claim 1, wherein the diaphragm plate is a monolayer structure where the recess has been made by removing material from the outer surface of the monolayer structure.

8. A rnicroelectrornechanical pressure sensor structure of claim 1, wherein the diaphragm plate is a multi-layer structure that comprises a bottom layer that includes the inner surface, and a top layer over the bottom layer.

9. A rnicroelectrornechanical pressure sensor structure of claim 8, wherein a region of the top layer provides the planar surface part of the outer surface and the depth of the recess corresponds to the thickness of the top layer.

10. A microelectromechanical pressure sensor structure of claim 9, wherein the lower layer and the top layer are of the same material.

11. A microelectromechanical pressure sensor structure of claim 9, wherein the lower layer and the top layer are of different material.

12. A microelectromechanical pressure sensor structure of claim 10, wherein the top layer is of the same material as the side walls.

13. A microelectromechanical pressure sensor structure of claim 1, wherein the inner surface includes at least one recess, a depth of which extends away from the gap in the direction of the side walls.

14. A microelectromechanical pressure sensor structure of claim 13, wherein the recess in the planar surface part of the outer surface and the recess in the inner surface are identical.

15. A microelectromechanical pressure sensor structure of claim 13, wherein the recess in the planar surface part of the outer surface and the recess in the inner surface are symmetrically positioned in either side of the diaphragm.

16. A microelectromechanical pressure sensor structure of claim 13, wherein the recess in the planar surface part of the outer surface and the recess in the inner surface are asymmetrically positioned in the diaphragm.

17. A pressure sensor device that comprises a pressure sensor structure of claim 1.