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SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

  • US 20140353678A1
  • Filed: 08/02/2012
  • Published: 12/04/2014
  • Est. Priority Date: 03/16/2012
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • an active region formed in an upper layer portion of a semiconductor layer of a first conductivity type; and

    a plurality of electric field relaxation layers disposed from an edge of said active region toward the outside so as to surround said active region, whereinsaid plurality of electric field relaxation layers include a plurality of first electric field relaxation layers and a plurality of second electric field relaxation layers alternately disposed adjacent to each other, said first electric field relaxation layer and said second electric field relaxation layer adjacent to each other forming a set,impurities of a second conductivity type are implanted to said first electric field relaxation layers at a first surface density, widths of said first electric field relaxation layers becoming smaller as apart from said active region,impurities of the second conductivity type are implanted to said second electric field relaxation layers at a second surface density lower than said first surface density, widths of said second electric field relaxation layers becoming larger as apart from said active region, andsaid plurality of electric field relaxation layers are disposed in order of said first electric field relaxation layer and said second electric field relaxation layer from said active region side.

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