Tuning Strain in Semiconductor Devices
First Claim
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1. A device comprising:
- a substrate; and
a Fin Field-Effect Transistor (FinFET) comprising;
a semiconductor layer over the substrate, wherein the semiconductor layer forms a channel of the FinFET;
a first silicon germanium oxide layer over the substrate, wherein the first silicon germanium oxide layer has a first germanium percentage;
a second silicon germanium oxide layer over the first silicon germanium oxide layer, wherein the second silicon germanium oxide layer has a second germanium percentage greater than the first germanium percentage;
a gate dielectric on sidewalls and a top surface of the semiconductor layer; and
a gate electrode over the gate dielectric.
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Abstract
A Fin Field-Effect Transistor (FinFET) includes a semiconductor layer over a substrate, wherein the semiconductor layer forms a channel of the FinFET. A first silicon germanium oxide layer is over the substrate, wherein the first silicon germanium oxide layer has a first germanium percentage. A second silicon germanium oxide layer is over the first silicon germanium oxide layer. The second silicon germanium oxide layer has a second germanium percentage greater than the first germanium percentage. A gate dielectric is on sidewalls and a top surface of the semiconductor layer. A gate electrode is over the gate dielectric.
66 Citations
20 Claims
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1. A device comprising:
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a substrate; and a Fin Field-Effect Transistor (FinFET) comprising; a semiconductor layer over the substrate, wherein the semiconductor layer forms a channel of the FinFET; a first silicon germanium oxide layer over the substrate, wherein the first silicon germanium oxide layer has a first germanium percentage; a second silicon germanium oxide layer over the first silicon germanium oxide layer, wherein the second silicon germanium oxide layer has a second germanium percentage greater than the first germanium percentage; a gate dielectric on sidewalls and a top surface of the semiconductor layer; and a gate electrode over the gate dielectric. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A device comprising:
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a substrate; and a Fin Field-Effect Transistor (FinFET) comprising; a first silicon germanium oxide layer over the substrate, wherein the first silicon germanium oxide layer has a first germanium percentage, and wherein the first silicon germanium oxide layer has a first width; a second silicon germanium oxide layer over the first silicon germanium oxide layer, wherein the second silicon germanium oxide layer has a second germanium percentage greater than the first germanium percentage, and wherein the second silicon germanium oxide layer has a second width smaller than the first width, with the first width and the second width being measured in a channel width direction of the FinFET; a silicon layer over the second silicon germanium oxide layer, wherein the silicon layer forms a channel of the FinFET; a gate dielectric on sidewalls and a top surface of the silicon layer; and a gate electrode over the gate dielectric. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. A method comprising:
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performing a first epitaxy to form a first silicon germanium layer over a substrate; performing a second epitaxy to form a second silicon germanium layer over the first silicon germanium layer; performing a third epitaxy to form a silicon layer substantially free from germanium over the second silicon germanium layer; oxidizing the first silicon germanium layer to form a first silicon germanium oxide layer; forming a gate dielectric on a top surface and sidewalls of the silicon layer, wherein the gate dielectric extends on sidewalls of the first silicon germanium oxide layer; and forming a gate electrode over the gate dielectric. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification