SYSTEM AND METHOD OF IMPROVING IMPLANT QUALITY IN A PLASMA-BASED IMPLANT SYSTEM

• US 20140356547A1
• Filed: 05/29/2013
• Published: 12/04/2014
• Est. Priority Date: 05/29/2013
• Status: Active Grant

• Current Assignee: Varian Semiconductor Equipment Associates Incorporated (Applied Materials Incorporated)
• Original Assignee: Varian Semiconductor Equipment Associates Incorporated (Applied Materials Incorporated)
• Inventors: Koo, Bon-Woong, Kim, Yong-Tae, Miller, Timothy J., Jeon, Min-Sung
• Granted Patent: US 9,441,290 B2
• Time in Patent Office: Days
• US Class Current: 427/523
• CPC Class Codes: C23C 14/48 Ion implantation
• CPC Class Codes: C23C 14/564 Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
• CPC Class Codes: H01J 37/32412 Plasma immersion ion implantation
• CPC Class Codes: H01J 37/32532 Electrodes
• CPC Class Codes: H01J 37/32853 Hygiene

Abstract

A system and method for the removal of deposited material from the walls of a plasma chamber is disclosed. The system may have two modes; a normal operating mode and a cleaning mode.

During the cleaning mode, the plasma is biased at a higher potential than the walls, thereby causing energetic ions from the plasma to strike the plasma wall, dislodging material previously deposited. This may be achieved through the use of one or more electrodes disposed in the plasma chamber, which are maintained at a first voltage during normal operating mode, and a second, higher voltage, during the cleaning mode.

Claims

1. An ion implant system, comprising:

a plasma chamber defined by a plurality of chamber walls;

an electrode disposed within said plasma chamber and electrically isolated from said chamber walls;

a plasma chamber power supply for providing a first voltage to said chamber walls;

an electrode power supply for providing a second voltage to said electrodes, wherein said first voltage and said second voltage are different during a cleaning mode.

2. The ion implant system of claim 1, wherein said electrode comprises a conductive outer surface.

3. The ion implant system of claim 2, further comprising a heating element disposed within said electrode and a heater power supply for providing a voltage to said heating element to heat said electrode.

4. The ion implant system of claim 3, where said heater power supply is referenced to said electrode power supply.

5. A method of operating an ion implant system, comprising:

creating a plasma within a plasma chamber, defined by a plurality of chamber walls;

providing an electrode within said plasma chamber, electrically isolated from said chamber walls;

biasing said chamber walls and said electrode at the same voltage during a normal operating mode; and

biasing said electrode at a first voltage higher than a second voltage applied to said chamber walls during a cleaning mode.

6. The method of claim 5, wherein said electrode comprises an internal heating element, and further comprising heating said electrode during said normal operating mode.

7. The method of claim 6, comprising heating said electrode during said cleaning mode.

8. The method of claim 5, further comprising biasing said electrode at a third voltage lower than said second voltage during a second cleaning mode.

9. A method of operating an ion implant system, comprising:

creating a plasma within a plasma chamber, defined by a plurality of chamber walls;

providing an electrode within said plasma chamber, electrically isolated from said chamber walls;

biasing said chamber walls and said electrode at a first voltage during a normal operating mode;

biasing a substrate at a voltage less than said first voltage;

implanting ions from said plasma into said substrate during said biasing at said voltage less than said first voltage during said normal operating mode;

biasing said electrode at a second voltage higher than a third voltage applied to said chamber walls after said implanting, wherein ions from said plasma are attracted toward said chamber walls to clean said chamber walls during a cleaning mode.

10. The method of claim 9, further comprising heating said electrode during said normal operating mode.

11. The method of claim 10, further comprising heating said electrode during said cleaning mode.

12. The method of claim 9, further comprising biasing said electrode at a fourth voltage lower than said third voltage after said implanting, wherein ions from said plasma are attracted toward said electrodes to clean said electrodes.

13. The method of claim 9, wherein after said cleaning mode is completed, further comprising:

biasing said chamber walls and said electrode at said first voltage during said normal operating mode; and

biasing a substrate at a voltage less than said first voltage to implant ions from said plasma into said substrate during said normal operating mode.

14. The method of claim 9, wherein said implanting of substrates is repeated a plurality of times for a plurality of substrates prior to executing said cleaning mode.

15. The method of claim 9, wherein said cleaning mode is executed for between 5 and 30 minutes.