METHOD OF MANUFACTURING MEMS DEVICES WITH RELIABLE HERMETIC SEAL
First Claim
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1. A method of manufacturing MEMS devices with a reliable seal comprising:
- inserting at least one wafer with a plurality of capped MEMS devices formed thereon into a vacuum prober;
reducing ambient pressure in the vacuum prober below a pressure within a chamber of at least one of the capped MEMS devices;
conducting resonant frequency testing of each of the MEMS devices while the at least one wafer is in the vacuum prober at the reduced ambient pressure;
distinguishing leaking MEMS devices from the remaining MEMS devices based upon quality factor (“
Q”
) measurements obtained from the resonant frequency testing.
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Abstract
Manufactured capped MEMS device wafers are tested for hermeticity on a vacuum prober at differing pressures or on a wafer prober at differing temperatures. Resonant frequency testing is conducted. Leaking MEMS devices are distinguished from the remaining MEMS devices on the basis of quality factor (“Q”) measurements obtained from the resonant frequency testing.
15 Citations
19 Claims
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1. A method of manufacturing MEMS devices with a reliable seal comprising:
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inserting at least one wafer with a plurality of capped MEMS devices formed thereon into a vacuum prober; reducing ambient pressure in the vacuum prober below a pressure within a chamber of at least one of the capped MEMS devices; conducting resonant frequency testing of each of the MEMS devices while the at least one wafer is in the vacuum prober at the reduced ambient pressure; distinguishing leaking MEMS devices from the remaining MEMS devices based upon quality factor (“
Q”
) measurements obtained from the resonant frequency testing. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method of manufacturing MEMS devices with a reliable seal comprising:
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placing at least one wafer with a plurality of capped MEMS devices formed thereon onto a wafer prober; conducting resonant frequency testing of each of the MEMS devices while the at least one wafer is at a first temperature on the wafer prober; bringing the at least one wafer to a second temperature on the wafer prober; conducting resonant frequency testing of each of the MEMS devices while the at least one wafer is at the second temperature on the wafer prober; distinguishing leaking MEMS devices from the remaining MEMS devices based upon quality factor (“
Q”
) obtained from the resonant frequency testing at the first temperature and at the second temperature. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19)
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Specification