METHOD OF FORMING A BOND RING FOR A FIRST AND SECOND SUBSTRATE
First Claim
3-1. The method of claim 1, wherein the forming the first bond ring includes wherein the first bond ring includes forming a eutectic bond of Germanium (Ge) and Aluminum (Al) and forming the second bond ring includes forming a eutectic bond of Aluminum (Al) and amorphous-Silicon (a-Si).
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Accused Products
Abstract
One method includes providing a first substrate; the first substrate may include a first MEMS device and a second MEMS device. A second substrate is also provided. The first substrate is bonded to the second substrate. The bonding may include forming a first bond ring around the first MEMS device and forming a second bond ring around the second MEMS device, wherein the second bond ring also encircles the first bond ring. In an embodiment, the eutectic point of the materials of the second bond ring is not reached during the bonding.
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Citations
20 Claims
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3-1. The method of claim 1, wherein the forming the first bond ring includes wherein the first bond ring includes forming a eutectic bond of Germanium (Ge) and Aluminum (Al) and forming the second bond ring includes forming a eutectic bond of Aluminum (Al) and amorphous-Silicon (a-Si).
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5. A method of semiconductor device fabrication, comprising:
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providing a first substrate, wherein the first substrate includes a first material for forming a first bond ring and a second material for forming a second bond ring; providing a second substrate including a third material for forming the first bond ring and a fourth material for forming the second bond ring; and bonding the second substrate to the first substrate, wherein the bonding reaches a first temperature and includes; forming a eutectic bond of the first bond ring to couple the first and second substrates by bringing the first and second substrates to a first temperature, wherein the first temperature is a eutectic point of the first and third materials; and using the second and fourth materials to define a gap distance between the bonded first and second substrates, wherein the second and fourth materials have a eutectic point higher than the first temperature. - View Dependent Claims (6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A method, comprising:
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providing a first substrate and a second substrate; bonding the first substrate to the second substrate, wherein the bonding includes; forming a first bond ring by forming a eutectic bond between first and second materials having a first eutectic point; and forming a second bond ring encircling the first bond ring, wherein the second materials have a second eutectic point greater than the first eutectic point, and wherein the bonding includes providing a temperature greater than the first eutectic point and not providing a temperature of the second eutectic point. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification