METHOD OF FORMING A BOND RING FOR A FIRST AND SECOND SUBSTRATE

• US 20140357007A1
• Filed: 08/14/2014
• Published: 12/04/2014
• Est. Priority Date: 09/27/2010
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Cheng, Chun-Wen, Yang, Hsueh-An
• Granted Patent: US 9,056,766 B2
• Time in Patent Office: Days
• US Class Current: 438/50
• CPC Class Codes: B81C 1/00269 Bonding of solid lids or wafers to the substrate
• CPC Class Codes: B81C 1/0038 Processes for creating layers of materials not provided for in groups B81C1/00357 - B81C1/00373
• CPC Class Codes: B81C 2203/0118 Bonding a wafer on the substrate, i.e. where the cap consists of another wafer
• CPC Class Codes: B81C 2203/019 characterised by the material or arrangement of seals between parts
• CPC Class Codes: H01L 23/02 Containers; Seals H01L23/12, H01L23/34, H01L23/48, H01L23/552, H01L23/66 take precedence; for memories G11C
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

One method includes providing a first substrate; the first substrate may include a first MEMS device and a second MEMS device. A second substrate is also provided. The first substrate is bonded to the second substrate. The bonding may include forming a first bond ring around the first MEMS device and forming a second bond ring around the second MEMS device, wherein the second bond ring also encircles the first bond ring. In an embodiment, the eutectic point of the materials of the second bond ring is not reached during the bonding.

Claims

3-1. The method of claim 1, wherein the forming the first bond ring includes wherein the first bond ring includes forming a eutectic bond of Germanium (Ge) and Aluminum (Al) and forming the second bond ring includes forming a eutectic bond of Aluminum (Al) and amorphous-Silicon (a-Si).

5. A method of semiconductor device fabrication, comprising:

providing a first substrate, wherein the first substrate includes a first material for forming a first bond ring and a second material for forming a second bond ring;

providing a second substrate including a third material for forming the first bond ring and a fourth material for forming the second bond ring; and

bonding the second substrate to the first substrate, wherein the bonding reaches a first temperature and includes;

forming a eutectic bond of the first bond ring to couple the first and second substrates by bringing the first and second substrates to a first temperature, wherein the first temperature is a eutectic point of the first and third materials; and

using the second and fourth materials to define a gap distance between the bonded first and second substrates, wherein the second and fourth materials have a eutectic point higher than the first temperature.

6. The method of claim 5, wherein the wafer-level bond ring encircles the device-level bond right.

7. The method of claim 6, wherein the defining the gap distance provides the gap distance is less than approximately 100 μ

m.

8. The method of claim 5, wherein the first material includes germanium (Ge) and the second material includes Aluminum (Al).

9. The method of claim 5, wherein the third material includes Aluminum (Al) and the fourth material includes amorphous-Silicon (a-Si).

10. The method of claim 5, wherein the providing the first substrate includes providing a substrate having a microelectromechanical system (MEMS) device disposed thereon.

11. The method of claim 10, wherein the providing the first substrate includes providing the first material disposed in a ring encircling the MEMs device.

12. The method of claim 5, wherein the providing the second substrate includes forming a complementary metal oxide semiconductor (CMOS) device on the second substrate.

13. The method of claim 5, wherein the bonding does not reach the eutectic point of the second and fourth materials.

14. The method of claim 5, further comprising:

dicing the bonded first and second substrates into a plurality of devices, wherein one of the plurality of devices includes the first bond ring and the second bond ring.

15. A method, comprising:

providing a first substrate and a second substrate;

bonding the first substrate to the second substrate, wherein the bonding includes;

forming a first bond ring by forming a eutectic bond between first and second materials having a first eutectic point; and

forming a second bond ring encircling the first bond ring, wherein the second materials have a second eutectic point greater than the first eutectic point, and wherein the bonding includes providing a temperature greater than the first eutectic point and not providing a temperature of the second eutectic point.

16. The method of claim 15, wherein at least one of the first and second bond rings include an Aluminum (Al) and amorphous-Silicon (a-Si) bond.

17. The method of claim 16, wherein the other of the first and second bond rings include a Germanium (Ge) and Aluminum (Al) bond.

18. The method of claim 15, further comprising:

forming a third bond ring including polyimide.

19. The method of claim 15, wherein the providing the first and second substrate includes providing at least one MEMS device.

20. The method of claim 19, wherein the forming the first bond ring provides a hermetic cavity for the at least one MEMs device.