SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME
First Claim
1. A semiconductor device comprising:
- a substrate;
a gate electrode formed on the substrate;
a gate insulating layer formed over the gate electrode;
an oxide semiconductor layer formed on the gate insulating layer;
source and drain electrodes electrically connected to the oxide semiconductor layer;
a first transparent electrode electrically connected to the drain electrode;
a dielectric layer formed over the source and drain electrodes; and
a second transparent electrode formed on the dielectric layer,wherein at least a portion of the second transparent electrode overlaps with the first transparent electrode with the dielectric layer interposed between them,at least one of upper and lower surfaces of the first transparent electrode contacts with a reducing insulating layer which has a property of reducing an oxide semiconductor included in the oxide semiconductor layer,the reducing insulating layer does not contact with a channel region of the oxide semiconductor layer, andthe oxide semiconductor layer and the first transparent electrode are formed out of the same oxide film.
1 Assignment
0 Petitions
Accused Products
Abstract
A semiconductor device (100A) includes a substrate (2), an oxide semiconductor layer (5) formed on the substrate (2), source and drain electrodes (6s, 6d) electrically connected to the oxide semiconductor layer (5), a first transparent electrode (7) electrically connected to the drain electrode (6d), a dielectric layer (8) formed on the source and drain electrodes (6s, 6d), and a second transparent electrode (9) formed on the dielectric layer (8). The upper and/or lower surface(s) of the first transparent electrode (7) contacts with a reducing insulating layer (8a) with the property of reducing an oxide semiconductor included in the oxide semiconductor layer (5). The second transparent electrode (9) overlaps at least partially with the first transparent electrode (7) via the dielectric layer (8). The oxide semiconductor layer (5) and the first transparent electrode (7) are formed out of the same oxide film.
5 Citations
13 Claims
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1. A semiconductor device comprising:
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a substrate; a gate electrode formed on the substrate; a gate insulating layer formed over the gate electrode; an oxide semiconductor layer formed on the gate insulating layer; source and drain electrodes electrically connected to the oxide semiconductor layer; a first transparent electrode electrically connected to the drain electrode; a dielectric layer formed over the source and drain electrodes; and a second transparent electrode formed on the dielectric layer, wherein at least a portion of the second transparent electrode overlaps with the first transparent electrode with the dielectric layer interposed between them, at least one of upper and lower surfaces of the first transparent electrode contacts with a reducing insulating layer which has a property of reducing an oxide semiconductor included in the oxide semiconductor layer, the reducing insulating layer does not contact with a channel region of the oxide semiconductor layer, and the oxide semiconductor layer and the first transparent electrode are formed out of the same oxide film. - View Dependent Claims (2, 3, 4, 5, 6, 12)
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7. A method for fabricating a semiconductor device, the method comprising the steps of:
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(a) providing a substrate; (b) forming a gate electrode and a gate insulating layer on the substrate; (c) forming an oxide semiconductor film on the gate insulating layer; (d) forming source and drain electrodes on the oxide semiconductor film; (e) forming a dielectric layer over the source and drain electrodes; and (f) forming, either before or after the step (c), a reducing insulating layer which contacts with a portion of the oxide semiconductor film and which has a property of reducing an oxide semiconductor included in the oxide semiconductor film, thereby turning a portion of the oxide semiconductor film which contacts with the reducing insulating layer into a first transparent electrode and also turning the rest of the oxide semiconductor film which has not been reduced into an oxide semiconductor layer; and (g) forming a second transparent electrode on the dielectric layer, at least a portion of the second transparent electrode overlapping with the first transparent electrode with the dielectric layer interposed between them. - View Dependent Claims (8, 9, 10, 11, 13)
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Specification