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SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME

  • US 20140361295A1
  • Filed: 01/24/2013
  • Published: 12/11/2014
  • Est. Priority Date: 01/31/2012
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a substrate;

    a gate electrode formed on the substrate;

    a gate insulating layer formed over the gate electrode;

    an oxide semiconductor layer formed on the gate insulating layer;

    source and drain electrodes electrically connected to the oxide semiconductor layer;

    a first transparent electrode electrically connected to the drain electrode;

    a dielectric layer formed over the source and drain electrodes; and

    a second transparent electrode formed on the dielectric layer,wherein at least a portion of the second transparent electrode overlaps with the first transparent electrode with the dielectric layer interposed between them,at least one of upper and lower surfaces of the first transparent electrode contacts with a reducing insulating layer which has a property of reducing an oxide semiconductor included in the oxide semiconductor layer,the reducing insulating layer does not contact with a channel region of the oxide semiconductor layer, andthe oxide semiconductor layer and the first transparent electrode are formed out of the same oxide film.

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