FLEXIBLE WAFER LEVELING DESIGN FOR VARIOUS ORIENTATION OF LINE/TRENCH
First Claim
1. A photolithography system, comprising:
- a lithographic exposure element configured to selectively expose a semiconductor substrate to electromagnetic radiation;
a level sensor configured to measure a height of a semiconductor substrate at different points over a top surface of the semiconductor substrate, comprising;
a projection source configured to generate a measurement beam that is provided to a semiconductor substrate via a projection grating;
a detector configured to receive a measurement beam that is reflected off of a semiconductor substrate via a detection grating and to measure an intensity of the reflected measurement beam corresponding to a height of the semiconductor substrate; and
an ambulatory element configured to selectively adjust an orientation of detection grating or the projection grating.
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Accused Products
Abstract
The present disclosure relates to a photolithography system having an ambulatory projection and/or detection gratings that provide for high quality height measurements without the use of an air gauge. In some embodiments, the photolithography system has a level sensor having a projection source that generates a measurement beam that is provided to a semiconductor substrate via a projection grating. A detector is positioned to receive a measurement beam reflected from the semiconductor substrate via a detection grating. An ambulatory element selectively varies an orientation of the projection grating and/or the detection grating to improve the measurement of the level sensor. By selectively varying an orientation of the projection and/or detection gratings, erroneous measurements of the level sensor can be eliminated.
7 Citations
20 Claims
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1. A photolithography system, comprising:
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a lithographic exposure element configured to selectively expose a semiconductor substrate to electromagnetic radiation; a level sensor configured to measure a height of a semiconductor substrate at different points over a top surface of the semiconductor substrate, comprising; a projection source configured to generate a measurement beam that is provided to a semiconductor substrate via a projection grating; a detector configured to receive a measurement beam that is reflected off of a semiconductor substrate via a detection grating and to measure an intensity of the reflected measurement beam corresponding to a height of the semiconductor substrate; and an ambulatory element configured to selectively adjust an orientation of detection grating or the projection grating. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A level sensor configured to measure a height of a semiconductor substrate at different points over a top surface of the semiconductor substrate, comprising:
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a projection source configured to generate a measurement beam that is reflected off of a semiconductor substrate; a detector configured to receive the measurement beam reflected off of the semiconductor substrate and to measure an intensity of the reflected measurement beam corresponding to a height of the semiconductor substrate; a detection grating positioned between the semiconductor substrate and the detector; and an ambulatory element configured to selectively rotate the detection grating. - View Dependent Claims (11, 12, 13, 14, 15, 16)
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17. A method of determining a height of a semiconductor substrate for a photolithography process, comprising:
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providing a semiconductor substrate into a photolithography tool with an ambulatory projection grating or an ambulatory detection grating; operating a level sensor to generate a measurement beam along a path that passes through the projection grating or the detection grating; measuring an intensity level of the reflected measurement beam passing through the detection grating; and selectively adjusting an orientation of the projection grating or the detection grating based upon the detected intensity level. - View Dependent Claims (18, 19, 20)
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Specification