LIGHT-EMITTING DIODE ARRANGEMENT

• US 20140367708A1
• Filed: 12/07/2012
• Published: 12/18/2014
• Est. Priority Date: 12/07/2011
• Status: Abandoned Application

• Current Assignee: OSRAM GmbH (Ams-Osram AG)
• Original Assignee: OSRAM GmbH (Ams-Osram AG)
• Inventors: Sorg, Joerg, Kaltenbacher, Axel, Biebersdorf, Andreas
• Application Number:
  US14/363,321
• Publication Number:
  US 20140367708A1
• Time in Patent Office: Days
• US Class Current: 257/88
• CPC Class Codes: H01L 2224/48137 the bodies being arranged next to each other, e.g. on a common substrate
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 25/0756 Stacked arrangements of devices
• CPC Class Codes: H01L 33/56 Materials, e.g. epoxy or silicone resin

Abstract

A light-emitting diode arrangement may include a first layer structure including at least one epitaxially formed light-emitting diode, and at least one second layer structure including at least one epitaxially formed light-emitting diode, wherein the at least one second layer structure is arranged on the first layer structure, and wherein contact faces of the at least one epitaxially formed light-emitting diode in the respective layer structure face contact faces of the at least one epitaxially formed light-emitting diode of the layer structure arranged directly therebelow or thereabove.

Claims

1. A light-emitting diode arrangement, comprising:

a first layer structure comprising at least one epitaxially formed light-emitting diode, and

at least one second layer structure comprising at least one epitaxially formed light-emitting diode,

wherein the at least one second layer structure is arranged on the first layer structure, and

wherein contact faces of the at least one epitaxially formed light-emitting diode in the respective layer structure face contact faces of the at least one epitaxially formed light-emitting diode of the layer structure arranged directly therebelow or thereabove.

2. The light-emitting diode arrangement as claimed in claim 1,

wherein the first layer structure comprises a plurality of epitaxially formed light-emitting diodes.

3. The light-emitting diode arrangement as claimed in claim 1,

wherein the at least one second layer structure comprises a plurality of epitaxially formed light-emitting diodes.

4. The light-emitting diode arrangement as claimed in claim 2,

wherein the plurality of epitaxially formed light-emitting diodes within the first layer structure is arranged on a translucent carrier.

5. The light-emitting diode arrangement as claimed in claim 2,

wherein the plurality of epitaxially formed light-emitting diodes within the first layer structure is arranged on a transparent carrier.

6. The light-emitting diode arrangement as claimed in claim 4,

wherein the carrier is a transparent substrate, which has a surface suitable for the growing of epitaxial layers.

7. The light-emitting diode arrangement as claimed in claim 2,

wherein a spatial region between the plurality of epitaxially formed light-emitting diodes in the first layer structure is filled with a material.

8. The light-emitting diode arrangement as claimed in claim 1,

configured in such a way that light emitted by the at least one epitaxially formed light-emitting diode of the first layer structure and/or light emitted by the at least one epitaxially formed light-emitting diode of the at least one second layer structure is decoupled on at least one side face of the light-emitting diode arrangement.

9. The light-emitting diode arrangement as claimed in claim 1,

wherein at least one side face of the light-emitting diode arrangement is coated with a light-reflecting material.

10. The light-emitting diode arrangement as claimed in claim 2,

wherein the plurality of epitaxially formed light-emitting diodes of the first layer structure is interconnected in a series circuit.

11. The light-emitting diode arrangement as claimed in claim 1,

wherein the plurality of epitaxially formed light-emitting diodes of the respective layer structure are connected to one another by means of the plurality of epitaxially formed light-emitting diodes of the layer structure situated directly therebelow or thereabove.

12. The light-emitting diode arrangement as claimed in claim 3,

wherein the plurality of epitaxially formed light-emitting diodes within the second layer structure is arranged on a translucent carrier.

13. The light-emitting diode arrangement as claimed in claim 3,

wherein the plurality of epitaxially formed light-emitting diodes within the second layer structure is arranged on a transparent carrier.

14. The light-emitting diode arrangement as claimed in claim 5,

wherein the carrier is a transparent substrate, which has a surface suitable for the growing of epitaxial layers.

15. The light-emitting diode arrangement as claimed in claim 12,

wherein the carrier is a transparent substrate, which has a surface suitable for the growing of epitaxial layers.

16. The light-emitting diode arrangement as claimed in claim 13,

wherein the carrier is a transparent substrate, which has a surface suitable for the growing of epitaxial layers.

17. The light-emitting diode arrangement as claimed in claim 3,

wherein a spatial region between the plurality of epitaxially formed light-emitting diodes in the at least one second layer structure is filled with a material.

18. The light-emitting diode arrangement as claimed in claim 3,

wherein the plurality of epitaxially formed light-emitting diodes of the at least one second layer structure is interconnected in a series circuit.