SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

• US 20140367736A1
• Filed: 08/08/2014
• Published: 12/18/2014
• Est. Priority Date: 03/28/2012
• Status: Active Grant

• Current Assignee: Fuji Electric Company Limited (Fuji Electric Systems Company Limited)
• Original Assignee: Fuji Electric Company Limited (Fuji Electric Systems Company Limited)
• Inventors: HORIO, Masafumi, NAKAMURA, Hideyo, IIZUKA, Yuji
• Granted Patent: US 9,379,083 B2
• Time in Patent Office: Days
• US Class Current: 257/133
• CPC Class Codes: H01L 2224/06 of a plurality of bonding areas
• CPC Class Codes: H01L 2224/45124 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 23/051 another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
• CPC Class Codes: H01L 23/3107 the device being completely enclosed
• CPC Class Codes: H01L 23/34 Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements thermal treatment apparatus H01L21/00
• CPC Class Codes: H01L 23/49811 Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads H01L23/49827 takes precedence
• CPC Class Codes: H01L 23/5385 Assembly of a plurality of insulating substrates
• CPC Class Codes: H01L 24/02 Bonding areas on insulating substrates, e.g. chip carriers, H01L23/49816, H01L23/49838, H01L23/5389; Manufacturing methods related thereto
• CPC Class Codes: H01L 24/80 Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
• CPC Class Codes: H01L 25/072 the devices being arranged next to each other
• CPC Class Codes: H01L 25/115 the devices being arranged next to each other
• CPC Class Codes: H01L 25/117 Stacked arrangements of devices
• CPC Class Codes: H01L 25/18 the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
• CPC Class Codes: H01L 29/66325 controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01028 Nickel [Ni]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/01322 : Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/12032 : Schottky diode
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: H01L 2924/1305 : Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13055 : Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/15787 : Ceramics, e.g. crystalline carbides, nitrides or oxides
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H02M 7/003 : Constructional details, e.g. physical layout, assembly, wiring or busbar connections
• CPC Class Codes: H05K 1/0263 : High current adaptations, e.g. printed high current conductors or using auxiliary non-printed means; Fine and coarse circuit patterns on one circuit board H05K1/0293 takes precedence
• CPC Class Codes: H05K 2201/10166 : Transistor

Abstract

A semiconductor device is a composite module in which three power semiconductor modules are arranged at a predetermined interval in the same plane and pin-shaped conductors that are drawn from the power semiconductor modules to the outside are connected to three main terminal plates such that they are integrated with each other. When the entire composite module is accommodated in a protective case and a radiation fin is provided, bolts are inserted into through holes to fix the protective case to the radiation fin. In this way, it is possible to accommodate the composite module in the protective case while reliably bringing the bottom of an insulating substrate into close contact with the radiation fin.

Claims

1. A semiconductor device comprising:

at least two semiconductor modules, each of the at least two semiconductor modules comprising a circuit board and at least one semiconductor circuit disposed on the circuit board;

a main terminal plate electrically connecting terminals of the semiconductor circuits of the at least two semiconductor modules and comprising a connection terminal portion; and

a protective case accommodating a composite module comprising the main terminal plate and the at least two semiconductor modules and comprising an insertion hole through which the connection terminal portion extends.

2. The semiconductor device according to claim 1,

wherein each of the at least two semiconductor modules comprises a plurality of pin terminals connected to the terminals of the semiconductor circuit,

the main terminal plate is a conductive plate body disposed across each of the at least two semiconductor modules and comprises a plurality of through holes respectively receiving the pin terminals,

the connection terminal portion comprises a rising piece comprising a bent portion of the plate body, and

the rising piece extends outside of the protective case through the insertion hole.

3. The semiconductor device according to claim 1,

wherein each of the at least two the semiconductor modules comprises a plurality of terminal plates connected to the terminals of the semiconductor circuit and comprising a fastening opening portion,

the main terminal plate is a conductive plate body disposed across each of the at least two semiconductor modules and comprises a plurality of bolt insertion holes through which the main terminal plate is fastened to the terminal plate via the fastening opening portion and the bolt insertion hole,

the connection terminal portion comprises a rising piece comprising a bent portion of the plate body, and

the rising piece extends outside of the protective case through the insertion hole.

4. The semiconductor device according to claim 1, further comprising a heat sink,

wherein the protective case comprises an opening, and

the heat sink is fixed to the protective case via the opening such that the at least two semiconductor modules physically contact the heat sink.

5. The semiconductor device according to claim 1,

wherein each of the at least two semiconductor modules comprise a metal plate thermally connected to the circuit board and exposed outside of the protective case.

6. The semiconductor device according to claim 1,

wherein the terminals of the semiconductor circuit and at least a portion of the main terminal plate comprise copper (Cu), aluminum (Al), silver (Ag), gold (Au), or alloys thereof.

7. The semiconductor device according to claim 1, further comprising:

a second main terminal plate connecting the main terminal plates and forming a conduction path between a plurality of the composite modules accommodated in the protective case; and

a host protective case accommodating at least two or more composite modules connected by the second main terminal plate.

8. The semiconductor device according to claim 1,

wherein the semiconductor circuit forms a half-bridge circuit comprising an IGBT and a free wheeling diode on the circuit board.

12. The semiconductor device according to claim 8,

wherein the composite module comprises three semiconductor modules,

a first terminal connected to one end of the half-bridge circuit, a second terminal connected to a midpoint of the half-bridge circuit, and a third terminal connected to the other end of the half-bridge circuit extend from the semiconductor modules,

a first main terminal plate having a first connection terminal portion electrically connects the first terminals of the three semiconductor modules,

a second main terminal plate having a second connection terminal portion electrically connects the third terminals of the three semiconductor modules, and

a third main terminal plate having a third connection terminal portion, a fourth main terminal plate having a fourth connection terminal portion, and a fifth main terminal plate having a fifth connection terminal portion are connected to the second terminals.

13. The semiconductor device according to claim 12,

wherein the third, fourth, and fifth connection terminal portions are arranged in a straight line.

14. The semiconductor device according to claim 8,

wherein the composite module comprises three semiconductor modules,

a first terminal connected to one end of the half-bridge circuit, a second terminal connected to a midpoint of the half-bridge circuit, and a third terminal connected to the other end of the half-bridge circuit extend from the semiconductor modules,

a first main terminal plate having a first connection terminal portion is connected to the first terminal of one of the three semiconductor modules,

a second main terminal plate having a second connection terminal portion is connected to the third terminal of the one semiconductor module,

a third main terminal plate having a third connection terminal portion is connected between the second terminal of the one semiconductor module and the second terminal of another semiconductor module,

a fourth main terminal plate having a fourth connection terminal portion is connected to the second terminal of the other semiconductor module,

a fifth main terminal plate connects the other two first terminals, and

a sixth main terminal plate connects the other two third terminals.

15. The semiconductor device according to claim 1,

wherein the composite module comprises a first semiconductor module in which a half-bridge circuit formed by an IGBT and a free wheeling diode is formed as the semiconductor circuit on the circuit board and a second semiconductor module in which a series circuit of reverse blocking IGBTs is formed as the semiconductor circuit on the circuit board,

a first terminal connected to one end of the half-bridge circuit, a second terminal connected to a midpoint of the half-bridge circuit, and a third terminal connected to the other end of the half-bridge circuit extend from the first semiconductor module,

a first terminal connected to one end of the series circuit, a second terminal connected to a midpoint of the series circuit, and a third terminal connected to the other end of the series circuit extend from the second semiconductor module,

a first main terminal plate having a first connection terminal portion is connected to the first terminal of the first semiconductor module and the first and third terminals of the second semiconductor module,

a second main terminal plate having a second connection terminal portion is connected to the third terminal of the first semiconductor module,

a third main terminal plate having a third connection terminal portion is connected to the second terminal of the second semiconductor module, and

a fourth main terminal plate having a fourth connection terminal portion is connected to the third terminal of the first semiconductor module.

16. The semiconductor device according to claim 1,

wherein each of the at least two semiconductor modules comprises a through hole.

17. The semiconductor device according to claim 16,

wherein the protective case comprises openings respectively corresponding to the through holes of each of the at least two semiconductor modules.

18. The semiconductor device according to claim 17, further comprising a heat sink, the protective case and each of the at least two semiconductor modules being coupled to the heat sink via fasteners respectively extending through the corresponding openings and through holes.

9. A method for manufacturing a semiconductor device comprising:

radiating a laser beam to surfaces of terminals that extend from semiconductor circuits of at least two semiconductor modules, each of the at least two semiconductor modules comprising a circuit board and at least one semiconductor circuit disposed on the circuit board;

bonding the irradiated terminals and a main terminal plate common to the at least two semiconductor modules; and

forming a conduction path between the at least two semiconductor modules.

10. A method for manufacturing a semiconductor device comprising:

forming a nickel (Ni) or tin (Sn)-based alloy film on surfaces of terminals extending from semiconductor circuits of at least two semiconductor modules, each of the at least two semiconductor modules comprising a circuit board and at least one semiconductor circuit disposed on the circuit board;

applying lead (Pb)-free solder onto the alloy film and bonding a main terminal plate common to the at least two semiconductor modules to the terminals; and

forming a conduction path between the at least two semiconductor modules.

11. The method for manufacturing a semiconductor device according to claim 10,

wherein the lead-free solder has a melting point that is lower than a glass-transition temperature of a mold resin material for sealing the semiconductor module.